0.1 μm-gate InGaP/lnGaAs HEMT Technology for millimeter-wave applications

Naoki Harada, Tamio Saito, Hideyuki Oikawa, Yoji Ohashi, Yuji Awano, Masayuki Abe, Kohki Hikosaka

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    This paper describes our new technology for creating a highly productive 0.1 urn gate InGaP/InGaAs HEMT with a GaAs substrate for a millimeter-wave MMIC. We applied a phaseshifting photo lithographic technique and sidewall deposition/etching process to fabricate a 0.1 urn gate electrode. The fabricated HEMTs showed excellent high-frequency performance; An MSG exceeding 10 dB at 60 GHz. We also fabricated a 60 GHz band, four-stage lownoise amplifier MMIC and demonstrated its superior performance (Gain= 27 dB and NF= 3.1 dB @6i GHz). These results strongly suggest that our InGaP/InGaAs HEMTs technologies are highly applicable for millimeter-wave applications.

    Original languageEnglish
    Pages (from-to)876-879
    Number of pages4
    JournalIEICE Transactions on Electronics
    VolumeE81-C
    Issue number6
    Publication statusPublished - 1998

    Keywords

    • HEMT
    • Ingap
    • Low noise amplifier
    • MMIC
    • Nun-wave

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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  • Cite this

    Harada, N., Saito, T., Oikawa, H., Ohashi, Y., Awano, Y., Abe, M., & Hikosaka, K. (1998). 0.1 μm-gate InGaP/lnGaAs HEMT Technology for millimeter-wave applications. IEICE Transactions on Electronics, E81-C(6), 876-879.