This paper describes our new technology for creating a highly productive 0.1 urn gate InGaP/InGaAs HEMT with a GaAs substrate for a millimeter-wave MMIC. We applied a phaseshifting photo lithographic technique and sidewall deposition/etching process to fabricate a 0.1 urn gate electrode. The fabricated HEMTs showed excellent high-frequency performance; An MSG exceeding 10 dB at 60 GHz. We also fabricated a 60 GHz band, four-stage lownoise amplifier MMIC and demonstrated its superior performance (Gain= 27 dB and NF= 3.1 dB @6i GHz). These results strongly suggest that our InGaP/InGaAs HEMTs technologies are highly applicable for millimeter-wave applications.
|Number of pages||4|
|Journal||IEICE Transactions on Electronics|
|Publication status||Published - 1998|
- Low noise amplifier
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering