10nm-diameter tri-gate silicon nanowire MOSFETs with enhanced high-field transport and V th tunability through thin BOX

Masumi Saitoh, Kensuke Ota, Chika Tanaka, Ken Uchida, Toshinori Numata

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    27 Citations (Scopus)

    Abstract

    We demonstrate high-performance 10nm-diameter tri-gate nanowire transistors (NW Tr.) with V th tunability, small variability and negligible self-heating. Optimized S/D and stress memorization technique (SMT) lead to significant parasitic resistance reduction and mobility enhancement. Saturation velocity increase by SMT further enhances high-field carrier velocity and I on of 1mA/μm at I off of 100nA/μm is achieved. We also demonstrate V th control in tri-gate NW Tr. with thin BOX for the first time. The degradation of body effect by NW narrowing can be recovered by thinning NW height, enabling dynamic power and performance management.

    Original languageEnglish
    Title of host publication2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
    Pages11-12
    Number of pages2
    DOIs
    Publication statusPublished - 2012 Sep 27
    Event2012 Symposium on VLSI Technology, VLSIT 2012 - Honolulu, HI, United States
    Duration: 2012 Jun 122012 Jun 14

    Publication series

    NameDigest of Technical Papers - Symposium on VLSI Technology
    ISSN (Print)0743-1562

    Other

    Other2012 Symposium on VLSI Technology, VLSIT 2012
    CountryUnited States
    CityHonolulu, HI
    Period12/6/1212/6/14

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • Cite this

    Saitoh, M., Ota, K., Tanaka, C., Uchida, K., & Numata, T. (2012). 10nm-diameter tri-gate silicon nanowire MOSFETs with enhanced high-field transport and V th tunability through thin BOX. In 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers (pp. 11-12). [6242436] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2012.6242436