10nm-diameter tri-gate silicon nanowire MOSFETs with enhanced high-field transport and V th tunability through thin BOX

Masumi Saitoh; Kensuke Ota; Chika Tanaka; Ken Uchida; Toshinori Numata

doi:10.1109/VLSIT.2012.6242436

10nm-diameter tri-gate silicon nanowire MOSFETs with enhanced high-field transport and V _th tunability through thin BOX

Masumi Saitoh, Kensuke Ota, Chika Tanaka, Ken Uchida, Toshinori Numata

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

30 Citations (Scopus)

Abstract

We demonstrate high-performance 10nm-diameter tri-gate nanowire transistors (NW Tr.) with V _th tunability, small variability and negligible self-heating. Optimized S/D and stress memorization technique (SMT) lead to significant parasitic resistance reduction and mobility enhancement. Saturation velocity increase by SMT further enhances high-field carrier velocity and I _on of 1mA/μm at I _off of 100nA/μm is achieved. We also demonstrate V _th control in tri-gate NW Tr. with thin BOX for the first time. The degradation of body effect by NW narrowing can be recovered by thinning NW height, enabling dynamic power and performance management.

Original language	English
Title of host publication	2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers
Pages	11-12
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2012.6242436
Publication status	Published - 2012
Externally published	Yes
Event	2012 Symposium on VLSI Technology, VLSIT 2012 - Honolulu, HI, United States Duration: 2012 Jun 12 → 2012 Jun 14

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	2012 Symposium on VLSI Technology, VLSIT 2012
Country/Territory	United States
City	Honolulu, HI
Period	12/6/12 → 12/6/14

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2012.6242436

Cite this

Saitoh, M., Ota, K., Tanaka, C., Uchida, K., & Numata, T. (2012). 10nm-diameter tri-gate silicon nanowire MOSFETs with enhanced high-field transport and V _th tunability through thin BOX. In 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers (pp. 11-12). [6242436] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2012.6242436

10nm-diameter tri-gate silicon nanowire MOSFETs with enhanced high-field transport and V _th tunability through thin BOX. / Saitoh, Masumi; Ota, Kensuke; Tanaka, Chika et al.
2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers. 2012. p. 11-12 6242436 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saitoh, M, Ota, K, Tanaka, C, Uchida, K & Numata, T 2012, 10nm-diameter tri-gate silicon nanowire MOSFETs with enhanced high-field transport and V _th tunability through thin BOX. in 2012 Symposium on VLSI Technology, VLSIT 2012 - Digest of Technical Papers., 6242436, Digest of Technical Papers - Symposium on VLSI Technology, pp. 11-12, 2012 Symposium on VLSI Technology, VLSIT 2012, Honolulu, HI, United States, 12/6/12. https://doi.org/10.1109/VLSIT.2012.6242436

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