160 Gbit/s high-speed ATM switching system

Naoaki Yamanaka, Katsumi Kaizu, Tohru Kishimoto, Kouichi Genda

Research output: Contribution to journalArticlepeer-review

Abstract

This paper describes a 160-Gbit/s high-speed multi-chip ATM switching system for broadband ISDN. This system uses a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 11-layer ceramic power supply layers. It uses 64 MCMs that are interconnected by a 98-high-way flexible printed circuit connector. Si-bipolar VLSIs are mounted on a MCM using the 15-μ m very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is used. The system switches ATM cells at a thoughtput of up to 320 Gbit/s and it is applicable for future B-ISDN.

Original languageEnglish
Pages (from-to)855-862
Number of pages8
JournalNTT R and D
Volume45
Issue number9
Publication statusPublished - 1996 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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