Abstract
This paper describes a 160-Gbit/s high-speed multi-chip ATM switching system for broadband ISDN. This system uses a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 11-layer ceramic power supply layers. It uses 64 MCMs that are interconnected by a 98-high-way flexible printed circuit connector. Si-bipolar VLSIs are mounted on a MCM using the 15-μ m very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is used. The system switches ATM cells at a thoughtput of up to 320 Gbit/s and it is applicable for future B-ISDN.
| Original language | English |
|---|---|
| Pages (from-to) | 855-862 |
| Number of pages | 8 |
| Journal | NTT R and D |
| Volume | 45 |
| Issue number | 9 |
| Publication status | Published - 1996 Dec 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering