This paper describes a 160-Gbit/s high-speed multi-chip ATM switching system for broadband ISDN. This system uses a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 11-layer ceramic power supply layers. It uses 64 MCMs that are interconnected by a 98-high-way flexible printed circuit connector. Si-bipolar VLSIs are mounted on a MCM using the 15-μ m very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is used. The system switches ATM cells at a thoughtput of up to 320 Gbit/s and it is applicable for future B-ISDN.
|Number of pages||8|
|Journal||NTT R and D|
|Publication status||Published - 1996 Dec 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering