This paper describes a 160 Gbit/s high speed multi-chip ATM switching system for broadband ISDN. This system uses a Copper/Polyimide MCM with 4-layer copper-polyimide signal transmission layers and 11-layers ceramic power supply layers. It uses 64 MCMs that are interconnected by a 98-high-way flexible printed circuit connector. Si-bipolar VLSIs are mounted on a Multi-Chip Module (MCM) using the 15-μm very thin pitch outer lead TAB technique. The system switches ATM cells at a throughput of up to 320 Gbit/s and it is applicable for future B-ISDN.
|Number of pages||8|
|Publication status||Published - 1997 Mar 1|
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering