160 Gbit/s high speed ATM switching system

Naoaki Yamanaka; Katsumi Kaizu; Tohru Kishimoto; Kouichi Genda

160 Gbit/s high speed ATM switching system

Naoaki Yamanaka, Katsumi Kaizu, Tohru Kishimoto, Kouichi Genda

Research output: Contribution to journal › Article › peer-review

Abstract

This paper describes a 160 Gbit/s high speed multi-chip ATM switching system for broadband ISDN. This system uses a Copper/Polyimide MCM with 4-layer copper-polyimide signal transmission layers and 11-layers ceramic power supply layers. It uses 64 MCMs that are interconnected by a 98-high-way flexible printed circuit connector. Si-bipolar VLSIs are mounted on a Multi-Chip Module (MCM) using the 15-μm very thin pitch outer lead TAB technique. The system switches ATM cells at a throughput of up to 320 Gbit/s and it is applicable for future B-ISDN.

Original language	English
Pages (from-to)	28-35
Number of pages	8
Journal	NTT Review
Volume	9
Issue number	2
Publication status	Published - 1997 Mar 1
Externally published	Yes

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering

Cite this

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author = "Naoaki Yamanaka and Katsumi Kaizu and Tohru Kishimoto and Kouichi Genda",

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AU - Kishimoto, Tohru

AU - Genda, Kouichi

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AB - This paper describes a 160 Gbit/s high speed multi-chip ATM switching system for broadband ISDN. This system uses a Copper/Polyimide MCM with 4-layer copper-polyimide signal transmission layers and 11-layers ceramic power supply layers. It uses 64 MCMs that are interconnected by a 98-high-way flexible printed circuit connector. Si-bipolar VLSIs are mounted on a Multi-Chip Module (MCM) using the 15-μm very thin pitch outer lead TAB technique. The system switches ATM cells at a throughput of up to 320 Gbit/s and it is applicable for future B-ISDN.

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160 Gbit/s high speed ATM switching system

Abstract

ASJC Scopus subject areas

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