160 Gbit/s high speed ATM switching system

Naoaki Yamanaka, Katsumi Kaizu, Tohru Kishimoto, Kouichi Genda

Research output: Contribution to journalArticle

Abstract

This paper describes a 160 Gbit/s high speed multi-chip ATM switching system for broadband ISDN. This system uses a Copper/Polyimide MCM with 4-layer copper-polyimide signal transmission layers and 11-layers ceramic power supply layers. It uses 64 MCMs that are interconnected by a 98-high-way flexible printed circuit connector. Si-bipolar VLSIs are mounted on a Multi-Chip Module (MCM) using the 15-μm very thin pitch outer lead TAB technique. The system switches ATM cells at a throughput of up to 320 Gbit/s and it is applicable for future B-ISDN.

Original languageEnglish
Pages (from-to)28-35
Number of pages8
JournalNTT Review
Volume9
Issue number2
Publication statusPublished - 1997 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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  • Cite this

    Yamanaka, N., Kaizu, K., Kishimoto, T., & Genda, K. (1997). 160 Gbit/s high speed ATM switching system. NTT Review, 9(2), 28-35.