1=f noise characteristics of fin-type field-effect transistors in saturation region

Hideo Sakai, Shin Ichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Yuki Ishikawa, Junichi Tsukada, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Meishoku Masahara, Hiroki Ishikuro

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this work, we measured 1=f noise of independent-double-gate-(IDG-) fin-type FET (FinFET) which has two independent gates. Flicker noise of common-double-gate-(CDG-) mode which both gates are applied with the same voltage and IDG-mode that has one gate voltage grounded and the other gate voltage applied with arbitrary voltage, and both result were compared with the same drain current (Id). First, we measured relationship between characteristic of the normalized 1=f noise by Id (SId =I2 d ) and characteristic of Id. Both the SId =I2 d of IDG-and CDG-modes show nearly equal values and tendency. Next, this work also shows the relationship between 1=f noise and vertical electric field (Ei) of surface of gate oxide film. As a result we could not definitely see a large margin of 1=f noise between CDG-and IDG-modes from Ei. This work also discovered that 1=f noise was greatly influenced by Id density.

Original languageEnglish
Article number04CC23
JournalJapanese Journal of Applied Physics
Volume52
Issue number4 PART 2
DOIs
Publication statusPublished - 2013 Apr

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fins
Field effect transistors
field effect transistors
saturation
Electric potential
electric potential
Drain current
Oxide films
Electric fields
flicker
oxide films
margins
tendencies
electric fields

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

1=f noise characteristics of fin-type field-effect transistors in saturation region. / Sakai, Hideo; O'uchi, Shin Ichi; Endo, Kazuhiko; Matsukawa, Takashi; Liu, Yongxun; Ishikawa, Yuki; Tsukada, Junichi; Nakagawa, Tadashi; Sekigawa, Toshihiro; Koike, Hanpei; Masahara, Meishoku; Ishikuro, Hiroki.

In: Japanese Journal of Applied Physics, Vol. 52, No. 4 PART 2, 04CC23, 04.2013.

Research output: Contribution to journalArticle

Sakai, H, O'uchi, SI, Endo, K, Matsukawa, T, Liu, Y, Ishikawa, Y, Tsukada, J, Nakagawa, T, Sekigawa, T, Koike, H, Masahara, M & Ishikuro, H 2013, '1=f noise characteristics of fin-type field-effect transistors in saturation region', Japanese Journal of Applied Physics, vol. 52, no. 4 PART 2, 04CC23. https://doi.org/10.7567/JJAP.52.04CC23
Sakai, Hideo ; O'uchi, Shin Ichi ; Endo, Kazuhiko ; Matsukawa, Takashi ; Liu, Yongxun ; Ishikawa, Yuki ; Tsukada, Junichi ; Nakagawa, Tadashi ; Sekigawa, Toshihiro ; Koike, Hanpei ; Masahara, Meishoku ; Ishikuro, Hiroki. / 1=f noise characteristics of fin-type field-effect transistors in saturation region. In: Japanese Journal of Applied Physics. 2013 ; Vol. 52, No. 4 PART 2.
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