Abstract
A Si bipolar 2Gbit/s 16 × 16 high-speed space-divisionswitch LSI is described. High-speed operation of 2 Gbit/s and low-power dissipation of 2.8 W are achieved by adopting a new expandable structure, a very low voltage swingdifferential bipolar circuit design and a super self-aligned process technology (SST-1A). This LSI is applicable to future B-ISDN HDTV switching systems.
Original language | English |
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Pages (from-to) | 1470-1471 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 25 |
Issue number | 22 |
DOIs | |
Publication status | Published - 1989 Oct 26 |
Externally published | Yes |
Keywords
- Bipolar devices
- Integrated circuit
- Switching and switching circuits
- Telecommunications
ASJC Scopus subject areas
- Electrical and Electronic Engineering