A Si bipolar 2Gbit/s 16 × 16 high-speed space-divisionswitch LSI is described. High-speed operation of 2 Gbit/s and low-power dissipation of 2.8 W are achieved by adopting a new expandable structure, a very low voltage swingdifferential bipolar circuit design and a super self-aligned process technology (SST-1A). This LSI is applicable to future B-ISDN HDTV switching systems.
- Bipolar devices
- Integrated circuit
- Switching and switching circuits
ASJC Scopus subject areas
- Electrical and Electronic Engineering