Abstract
A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 531-533 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 32 |
| Issue number | S3 |
| DOIs | |
| Publication status | Published - 1993 |
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Keywords
- CuAISe2
- D-A pair
- Ionization energy
- LP-MOCVD
- Photoluminescence
- Zn-doping
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse2 epilayer grown by low-pressure metalorganic chemical vapor deposition. / Higuchi, Hirofumi; Sudo, Ryo; Matsumoto, Satoru.
In: Japanese Journal of Applied Physics, Vol. 32, No. S3, 1993, p. 531-533.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse2 epilayer grown by low-pressure metalorganic chemical vapor deposition
AU - Higuchi, Hirofumi
AU - Sudo, Ryo
AU - Matsumoto, Satoru
PY - 1993
Y1 - 1993
N2 - A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.
AB - A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.
KW - CuAISe2
KW - D-A pair
KW - Ionization energy
KW - LP-MOCVD
KW - Photoluminescence
KW - Zn-doping
UR - http://www.scopus.com/inward/record.url?scp=84956124293&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84956124293&partnerID=8YFLogxK
U2 - 10.7567/JJAPS.32S3.531
DO - 10.7567/JJAPS.32S3.531
M3 - Article
AN - SCOPUS:84956124293
VL - 32
SP - 531
EP - 533
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - S3
ER -