2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse2 epilayer grown by low-pressure metalorganic chemical vapor deposition

Hirofumi Higuchi; Ryo Sudo; Satoru Matsumoto

doi:10.7567/JJAPS.32S3.531

2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse₂ epilayer grown by low-pressure metalorganic chemical vapor deposition

Hirofumi Higuchi, Ryo Sudo, Satoru Matsumoto

Department of System Design Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe₂ epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.

Original language	English
Pages (from-to)	531-533
Number of pages	3
Journal	Japanese journal of applied physics
Volume	32
Issue number	S3
DOIs	https://doi.org/10.7567/JJAPS.32S3.531
Publication status	Published - 1993 Jan

Keywords

CuAISe2
D-A pair
Ionization energy
LP-MOCVD
Photoluminescence
Zn-doping

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.7567/JJAPS.32S3.531

Cite this

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title = "2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse2 epilayer grown by low-pressure metalorganic chemical vapor deposition",

abstract = "A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.",

keywords = "CuAISe2, D-A pair, Ionization energy, LP-MOCVD, Photoluminescence, Zn-doping",

author = "Hirofumi Higuchi and Ryo Sudo and Satoru Matsumoto",

year = "1993",

month = jan,

doi = "10.7567/JJAPS.32S3.531",

language = "English",

volume = "32",

pages = "531--533",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

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TY - JOUR

T1 - 2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse2 epilayer grown by low-pressure metalorganic chemical vapor deposition

AU - Higuchi, Hirofumi

AU - Sudo, Ryo

AU - Matsumoto, Satoru

PY - 1993/1

Y1 - 1993/1

N2 - A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.

AB - A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.

KW - CuAISe2

KW - D-A pair

KW - Ionization energy

KW - LP-MOCVD

KW - Photoluminescence

KW - Zn-doping

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DO - 10.7567/JJAPS.32S3.531

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VL - 32

SP - 531

EP - 533

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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