2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse2 epilayer grown by low-pressure metalorganic chemical vapor deposition

Hirofumi Higuchi, Ryo Sudo, Satoru Matsumoto

Research output: Contribution to journalArticle

Abstract

A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.

Original languageEnglish
Pages (from-to)531-533
Number of pages3
JournalJapanese Journal of Applied Physics
Volume32
Issue numberS3
DOIs
Publication statusPublished - 1993

Fingerprint

Low pressure chemical vapor deposition
Epilayers
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Photoluminescence
low pressure
photoluminescence
Ionization potential
Excitons
excitons
Impurities
ionization
impurities
Defects
energy
defects
excitation

Keywords

  • CuAISe2
  • D-A pair
  • Ionization energy
  • LP-MOCVD
  • Photoluminescence
  • Zn-doping

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse2 epilayer grown by low-pressure metalorganic chemical vapor deposition. / Higuchi, Hirofumi; Sudo, Ryo; Matsumoto, Satoru.

In: Japanese Journal of Applied Physics, Vol. 32, No. S3, 1993, p. 531-533.

Research output: Contribution to journalArticle

@article{cb4d89f9ec544f1dbae784381fa413a0,
title = "2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse2 epilayer grown by low-pressure metalorganic chemical vapor deposition",
abstract = "A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.",
keywords = "CuAISe2, D-A pair, Ionization energy, LP-MOCVD, Photoluminescence, Zn-doping",
author = "Hirofumi Higuchi and Ryo Sudo and Satoru Matsumoto",
year = "1993",
doi = "10.7567/JJAPS.32S3.531",
language = "English",
volume = "32",
pages = "531--533",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "S3",

}

TY - JOUR

T1 - 2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse2 epilayer grown by low-pressure metalorganic chemical vapor deposition

AU - Higuchi, Hirofumi

AU - Sudo, Ryo

AU - Matsumoto, Satoru

PY - 1993

Y1 - 1993

N2 - A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.

AB - A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.

KW - CuAISe2

KW - D-A pair

KW - Ionization energy

KW - LP-MOCVD

KW - Photoluminescence

KW - Zn-doping

UR - http://www.scopus.com/inward/record.url?scp=84956124293&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84956124293&partnerID=8YFLogxK

U2 - 10.7567/JJAPS.32S3.531

DO - 10.7567/JJAPS.32S3.531

M3 - Article

VL - 32

SP - 531

EP - 533

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - S3

ER -