2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse2 epilayer grown by low-pressure metalorganic chemical vapor deposition

Hirofumi Higuchi, Ryo Sudo, Satoru Matsumoto

Research output: Contribution to journal › Article › peer-review

Abstract

A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.

Original languageEnglish
Pages (from-to)531-533
Number of pages3
JournalJapanese journal of applied physics
Volume32
Issue numberS3
DOIs
Publication statusPublished - 1993 Jan

Keywords

  • CuAISe2
  • D-A pair
  • Ionization energy
  • LP-MOCVD
  • Photoluminescence
  • Zn-doping

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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