Abstract
A donor to acceptor pair photoluminescence (PL) peak at 2.51 eV was observed in Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor deposition. The summation of ionization energies of the donor and the acceptor was obtained to be 330 meV from the excitation intensity dependence of the PL peak energy. The Zn impurity is shown to act as a defect-killer because of the apperance of exciton emission at 2.716 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 531-533 |
| Number of pages | 3 |
| Journal | Japanese journal of applied physics |
| Volume | 32 |
| Issue number | S3 |
| DOIs | |
| Publication status | Published - 1993 Jan |
Keywords
- CuAISe2
- D-A pair
- Ionization energy
- LP-MOCVD
- Photoluminescence
- Zn-doping
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Higuchi, H., Sudo, R., & Matsumoto, S. (1993). 2.51 ev donor-acceptor pair photoluminescence from zn-doped cualse2 epilayer grown by low-pressure metalorganic chemical vapor deposition. Japanese journal of applied physics, 32(S3), 531-533. https://doi.org/10.7567/JJAPS.32S3.531