320 Gb/s high-speed ATM switching system hardware technologies based on copper-polyimide MCM

Naoaki Yamanaka, Ken ichi Endo, Kouichi Genda, Hideki Fukuda, Tohru Kishimoto, Shin ichi Sasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

This paper describes a 320 Gb/s high-speed multi-chip ATM switching system for broadband ISDN. This system employs a Copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. The system uses 64 MCMs that are interconnected by 98-highway flexible printed circuit connector. Si-bipolar VLSIs are mounted on MCM using the 150 μm very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is adopted. The system switches ATM cells up to 320 Gb/s throughput and it is applicable for future B-ISDN.

Original languageEnglish
Title of host publicationProceedings - Electronic Components and Technology Conference
PublisherPubl by IEEE
Pages776-785
Number of pages10
ISBN (Print)0780309154
Publication statusPublished - 1994 Jan 1
Externally publishedYes
EventProceedings of the 1994 IEEE 44th Electronic Components & Technology Conference - Washington, DC, USA
Duration: 1994 May 11994 May 4

Publication series

NameProceedings - Electronic Components and Technology Conference
ISSN (Print)0569-5503

Other

OtherProceedings of the 1994 IEEE 44th Electronic Components & Technology Conference
CityWashington, DC, USA
Period94/5/194/5/4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Yamanaka, N., Endo, K. I., Genda, K., Fukuda, H., Kishimoto, T., & Sasaki, S. I. (1994). 320 Gb/s high-speed ATM switching system hardware technologies based on copper-polyimide MCM. In Proceedings - Electronic Components and Technology Conference (pp. 776-785). (Proceedings - Electronic Components and Technology Conference). Publ by IEEE.