320 Gb/s High-Speed ATM Switching System Hardware Technologies Based on Copper-Polyimide MCM

Naoaki Yamanaka, Kouichi Genda, Hideki Fukuda, Tohru Kishimoto

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

This paper describes a 320 Gb/s high-speed multichip ATM switching system for broadband ISDN. This system employs a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. The system uses 64 MCM's that are interconnected by 98-highway flexible printed circuit connector. Si-bipolar VLSI's are mounted on MCM's using the 150 µm very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is adopted. The system switches ATM cells up to 320 Gb/s throughput, which is applicable for future. B-ISDN.

Original languageEnglish
Pages (from-to)83-91
Number of pages9
JournalIEEE Transactions on Components Packaging and Manufacturing Technology Part B
Volume18
Issue number1
DOIs
Publication statusPublished - 1995 Feb
Externally publishedYes

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Keywords

  • ATM
  • B-ISDN
  • MCM
  • copper-prolyimide

ASJC Scopus subject areas

  • Engineering(all)

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