TY - GEN
T1 - 6W/25mm2 inductive power transfer for non-contact wafer-level testing
AU - Radecki, Andrzej
AU - Chung, Hayun
AU - Yoshida, Yoichi
AU - Miura, Noriyuki
AU - Shidei, Tsunaaki
AU - Ishikuro, Hiroki
AU - Kuroda, Tadahiro
PY - 2011
Y1 - 2011
N2 - Wafer-level testing allows detection of manufacturing errors and removes nonfunctional devices early in the fabrication process. It is commonly performed by placing a probe card directly above a device under test (DUT) and establishing a mechanical contact between them by means of an array of probes. This is an invasive technique that may damage fragile low-k dielectric layers and deform pads or bumps. More importantly, it is very difficult to flip thinned wafers face up for probing if they were earlier positioned face down for back grinding. Additional difficulty in handling of thinned wafers arises if dies have to be flipped again for bumping. One solution to above problems is wireless probing. With a number of proposed techniques for establishing high-speed inductive-coupling data links [3] and measuring DC analog signal wirelessly [4], the largest remaining obstacle to non-contact wafer-level testing is supplying power to the DUT. This is because wireless power transfer solutions reported earlier [1,5] do not provide an output power that is sufficient for testing modern high performance devices.
AB - Wafer-level testing allows detection of manufacturing errors and removes nonfunctional devices early in the fabrication process. It is commonly performed by placing a probe card directly above a device under test (DUT) and establishing a mechanical contact between them by means of an array of probes. This is an invasive technique that may damage fragile low-k dielectric layers and deform pads or bumps. More importantly, it is very difficult to flip thinned wafers face up for probing if they were earlier positioned face down for back grinding. Additional difficulty in handling of thinned wafers arises if dies have to be flipped again for bumping. One solution to above problems is wireless probing. With a number of proposed techniques for establishing high-speed inductive-coupling data links [3] and measuring DC analog signal wirelessly [4], the largest remaining obstacle to non-contact wafer-level testing is supplying power to the DUT. This is because wireless power transfer solutions reported earlier [1,5] do not provide an output power that is sufficient for testing modern high performance devices.
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U2 - 10.1109/ISSCC.2011.5746297
DO - 10.1109/ISSCC.2011.5746297
M3 - Conference contribution
AN - SCOPUS:79955746740
SN - 9781612843001
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 230
EP - 231
BT - 2011 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2011
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2011 IEEE International Solid-State Circuits Conference, ISSCC 2011
Y2 - 20 February 2011 through 24 February 2011
ER -