Abstract
We developed 0.5 μm-gate 77 K analog monolithic HEMT amplifier that is to be used in an interface from a Josephson IC to a semiconductor IC. The HEMT was built from InGaP/InGaAs/GaAs materials that provide a stable system at 77 K. The amplifier includes a differential amplifier as its first stage to cancel out ground level fluctuations in the Josephson IC, and high gain source-grounded amplifier. An output of 0.7 Vp-p was obtained from a complementary input signal of 30 mVp-p, 3 Gbit/s, that was in RZ format. We successfully used this HEMT amplifier for transferring a voltage signal from 10-stack Josephson high-voltage drivers to a room temperature 50 Ω system with an amplitude of 0.7 Vp-p and a clock frequency of 300 MHz.
| Original language | English |
|---|---|
| Pages (from-to) | 1513-1518 |
| Number of pages | 6 |
| Journal | Solid-State Electronics |
| Volume | 43 |
| Issue number | 8 |
| Publication status | Published - 1999 Aug |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit. / Harada, Naoki; Awano, Yuji; Hikosaka, Kohki; Yokoyama, Naoki.
In: Solid-State Electronics, Vol. 43, No. 8, 08.1999, p. 1513-1518.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit
AU - Harada, Naoki
AU - Awano, Yuji
AU - Hikosaka, Kohki
AU - Yokoyama, Naoki
PY - 1999/8
Y1 - 1999/8
N2 - We developed 0.5 μm-gate 77 K analog monolithic HEMT amplifier that is to be used in an interface from a Josephson IC to a semiconductor IC. The HEMT was built from InGaP/InGaAs/GaAs materials that provide a stable system at 77 K. The amplifier includes a differential amplifier as its first stage to cancel out ground level fluctuations in the Josephson IC, and high gain source-grounded amplifier. An output of 0.7 Vp-p was obtained from a complementary input signal of 30 mVp-p, 3 Gbit/s, that was in RZ format. We successfully used this HEMT amplifier for transferring a voltage signal from 10-stack Josephson high-voltage drivers to a room temperature 50 Ω system with an amplitude of 0.7 Vp-p and a clock frequency of 300 MHz.
AB - We developed 0.5 μm-gate 77 K analog monolithic HEMT amplifier that is to be used in an interface from a Josephson IC to a semiconductor IC. The HEMT was built from InGaP/InGaAs/GaAs materials that provide a stable system at 77 K. The amplifier includes a differential amplifier as its first stage to cancel out ground level fluctuations in the Josephson IC, and high gain source-grounded amplifier. An output of 0.7 Vp-p was obtained from a complementary input signal of 30 mVp-p, 3 Gbit/s, that was in RZ format. We successfully used this HEMT amplifier for transferring a voltage signal from 10-stack Josephson high-voltage drivers to a room temperature 50 Ω system with an amplitude of 0.7 Vp-p and a clock frequency of 300 MHz.
UR - http://www.scopus.com/inward/record.url?scp=0033176751&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033176751&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033176751
VL - 43
SP - 1513
EP - 1518
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 8
ER -