Abstract
We developed 0.5 μm-gate 77 K analog monolithic HEMT amplifier that is to be used in an interface from a Josephson IC to a semiconductor IC. The HEMT was built from InGaP/InGaAs/GaAs materials that provide a stable system at 77 K. The amplifier includes a differential amplifier as its first stage to cancel out ground level fluctuations in the Josephson IC, and high gain source-grounded amplifier. An output of 0.7 Vp-p was obtained from a complementary input signal of 30 mVp-p, 3 Gbit/s, that was in RZ format. We successfully used this HEMT amplifier for transferring a voltage signal from 10-stack Josephson high-voltage drivers to a room temperature 50 Ω system with an amplitude of 0.7 Vp-p and a clock frequency of 300 MHz.
| Original language | English |
|---|---|
| Pages (from-to) | 1513-1518 |
| Number of pages | 6 |
| Journal | Solid-State Electronics |
| Volume | 43 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1999 Aug |
| Externally published | Yes |
| Event | Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) - Hayama-Machi, Jpn Duration: 1998 Aug 30 → 1998 Sep 2 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Harada, N., Awano, Y., Hikosaka, K., & Yokoyama, N. (1999). 77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit. Solid-State Electronics, 43(8), 1513-1518. https://doi.org/10.1016/S0038-1101(99)00097-0