77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit

Naoki Harada, Yuji Awano, Kohki Hikosaka, Naoki Yokoyama

Research output: Contribution to journalConference article


We developed 0.5 μm-gate 77 K analog monolithic HEMT amplifier that is to be used in an interface from a Josephson IC to a semiconductor IC. The HEMT was built from InGaP/InGaAs/GaAs materials that provide a stable system at 77 K. The amplifier includes a differential amplifier as its first stage to cancel out ground level fluctuations in the Josephson IC, and high gain source-grounded amplifier. An output of 0.7 Vp-p was obtained from a complementary input signal of 30 mVp-p, 3 Gbit/s, that was in RZ format. We successfully used this HEMT amplifier for transferring a voltage signal from 10-stack Josephson high-voltage drivers to a room temperature 50 Ω system with an amplitude of 0.7 Vp-p and a clock frequency of 300 MHz.

Original languageEnglish
Pages (from-to)1513-1518
Number of pages6
JournalSolid-State Electronics
Issue number8
Publication statusPublished - 1999 Aug
Externally publishedYes
EventProceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) - Hayama-Machi, Jpn
Duration: 1998 Aug 301998 Sep 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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