77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit

Naoki Harada; Yuji Awano; Kohki Hikosaka; Naoki Yokoyama

doi:10.1016/S0038-1101(99)00097-0

77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit

Naoki Harada, Yuji Awano, Kohki Hikosaka, Naoki Yokoyama

Research output: Contribution to journal › Conference article › peer-review

Abstract

We developed 0.5 μm-gate 77 K analog monolithic HEMT amplifier that is to be used in an interface from a Josephson IC to a semiconductor IC. The HEMT was built from InGaP/InGaAs/GaAs materials that provide a stable system at 77 K. The amplifier includes a differential amplifier as its first stage to cancel out ground level fluctuations in the Josephson IC, and high gain source-grounded amplifier. An output of 0.7 V_p-p was obtained from a complementary input signal of 30 mV_p-p, 3 Gbit/s, that was in RZ format. We successfully used this HEMT amplifier for transferring a voltage signal from 10-stack Josephson high-voltage drivers to a room temperature 50 Ω system with an amplitude of 0.7 V_p-p and a clock frequency of 300 MHz.

Original language	English
Pages (from-to)	1513-1518
Number of pages	6
Journal	Solid-State Electronics
Volume	43
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1101(99)00097-0
Publication status	Published - 1999 Aug
Event	Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) - Hayama-Machi, Jpn Duration: 1998 Aug 30 → 1998 Sep 2

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit",

abstract = "We developed 0.5 μm-gate 77 K analog monolithic HEMT amplifier that is to be used in an interface from a Josephson IC to a semiconductor IC. The HEMT was built from InGaP/InGaAs/GaAs materials that provide a stable system at 77 K. The amplifier includes a differential amplifier as its first stage to cancel out ground level fluctuations in the Josephson IC, and high gain source-grounded amplifier. An output of 0.7 Vp-p was obtained from a complementary input signal of 30 mVp-p, 3 Gbit/s, that was in RZ format. We successfully used this HEMT amplifier for transferring a voltage signal from 10-stack Josephson high-voltage drivers to a room temperature 50 Ω system with an amplitude of 0.7 Vp-p and a clock frequency of 300 MHz.",

author = "Naoki Harada and Yuji Awano and Kohki Hikosaka and Naoki Yokoyama",

note = "Funding Information: This work was performed under the management of FED as a part of the MITI R&D program (Josephson Device Hybrid System Technologies Project) supported by NEDO. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.; Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) ; Conference date: 30-08-1998 Through 02-09-1998",

year = "1999",

month = aug,

doi = "10.1016/S0038-1101(99)00097-0",

language = "English",

volume = "43",

pages = "1513--1518",

journal = "Solid-State Electronics",

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T1 - 77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit

AU - Harada, Naoki

AU - Awano, Yuji

AU - Hikosaka, Kohki

AU - Yokoyama, Naoki

N1 - Funding Information: This work was performed under the management of FED as a part of the MITI R&D program (Josephson Device Hybrid System Technologies Project) supported by NEDO. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 1999/8

Y1 - 1999/8

N2 - We developed 0.5 μm-gate 77 K analog monolithic HEMT amplifier that is to be used in an interface from a Josephson IC to a semiconductor IC. The HEMT was built from InGaP/InGaAs/GaAs materials that provide a stable system at 77 K. The amplifier includes a differential amplifier as its first stage to cancel out ground level fluctuations in the Josephson IC, and high gain source-grounded amplifier. An output of 0.7 Vp-p was obtained from a complementary input signal of 30 mVp-p, 3 Gbit/s, that was in RZ format. We successfully used this HEMT amplifier for transferring a voltage signal from 10-stack Josephson high-voltage drivers to a room temperature 50 Ω system with an amplitude of 0.7 Vp-p and a clock frequency of 300 MHz.

AB - We developed 0.5 μm-gate 77 K analog monolithic HEMT amplifier that is to be used in an interface from a Josephson IC to a semiconductor IC. The HEMT was built from InGaP/InGaAs/GaAs materials that provide a stable system at 77 K. The amplifier includes a differential amplifier as its first stage to cancel out ground level fluctuations in the Josephson IC, and high gain source-grounded amplifier. An output of 0.7 Vp-p was obtained from a complementary input signal of 30 mVp-p, 3 Gbit/s, that was in RZ format. We successfully used this HEMT amplifier for transferring a voltage signal from 10-stack Josephson high-voltage drivers to a room temperature 50 Ω system with an amplitude of 0.7 Vp-p and a clock frequency of 300 MHz.

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U2 - 10.1016/S0038-1101(99)00097-0

DO - 10.1016/S0038-1101(99)00097-0

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AN - SCOPUS:0033176751

VL - 43

SP - 1513

EP - 1518

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 8

T2 - Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98)

Y2 - 30 August 1998 through 2 September 1998

ER -

77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit

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