80 Gbit/s ATM switching module based on copper-polyimide MCM

K. Genda, Naoaki Yamanaka, Y. Doi, T. Kishimoto, H. Fukuda, S. Sasaki

Research output: Contribution to journalArticle

Abstract

An 80Gbit/s high-speed multichip ATM switching module for broadband ISDN is described. The module employs a copper-polyimide MCM with four-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. All MCMs are interconnected by 98-highway flexible printed circuit connectors. Four Si-bipolar VLSIs are mounted on an MCM using the 150 μm, very-thin-pitch, outer lead TAB technique. In addition, a high-performance heat-pipe cooling technique is adopted. The switching module handles ATM cell rates of up to 80Gbit/s and so will support the future B-ISDN.

Original languageEnglish
Pages (from-to)716-717
Number of pages2
JournalElectronics Letters
Volume31
Issue number9
DOIs
Publication statusPublished - 1995 Apr 27
Externally publishedYes

    Fingerprint

Keywords

  • Asynchronous transfer mode
  • Multichip modules
  • Printed circuits
  • Switching circuits

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Genda, K., Yamanaka, N., Doi, Y., Kishimoto, T., Fukuda, H., & Sasaki, S. (1995). 80 Gbit/s ATM switching module based on copper-polyimide MCM. Electronics Letters, 31(9), 716-717. https://doi.org/10.1049/el:19950472