80 Gbit/s ATM switching module based on copper-polyimide MCM

K. Genda; Naoaki Yamanaka; Y. Doi; T. Kishimoto; H. Fukuda; S. Sasaki

doi:10.1049/el:19950472

80 Gbit/s ATM switching module based on copper-polyimide MCM

K. Genda, Naoaki Yamanaka, Y. Doi, T. Kishimoto, H. Fukuda, S. Sasaki

Research output: Contribution to journal › Article › peer-review

Abstract

An 80Gbit/s high-speed multichip ATM switching module for broadband ISDN is described. The module employs a copper-polyimide MCM with four-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. All MCMs are interconnected by 98-highway flexible printed circuit connectors. Four Si-bipolar VLSIs are mounted on an MCM using the 150 μm, very-thin-pitch, outer lead TAB technique. In addition, a high-performance heat-pipe cooling technique is adopted. The switching module handles ATM cell rates of up to 80Gbit/s and so will support the future B-ISDN.

Original language	English
Pages (from-to)	716-717
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	9
DOIs	https://doi.org/10.1049/el:19950472
Publication status	Published - 1995 Apr 27
Externally published	Yes

Keywords

Asynchronous transfer mode
Multichip modules
Printed circuits
Switching circuits

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19950472

Cite this

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title = "80 Gbit/s ATM switching module based on copper-polyimide MCM",

abstract = "An 80Gbit/s high-speed multichip ATM switching module for broadband ISDN is described. The module employs a copper-polyimide MCM with four-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. All MCMs are interconnected by 98-highway flexible printed circuit connectors. Four Si-bipolar VLSIs are mounted on an MCM using the 150 μm, very-thin-pitch, outer lead TAB technique. In addition, a high-performance heat-pipe cooling technique is adopted. The switching module handles ATM cell rates of up to 80Gbit/s and so will support the future B-ISDN.",

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AU - Genda, K.

AU - Yamanaka, Naoaki

AU - Doi, Y.

AU - Kishimoto, T.

AU - Fukuda, H.

AU - Sasaki, S.

PY - 1995/4/27

Y1 - 1995/4/27

N2 - An 80Gbit/s high-speed multichip ATM switching module for broadband ISDN is described. The module employs a copper-polyimide MCM with four-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. All MCMs are interconnected by 98-highway flexible printed circuit connectors. Four Si-bipolar VLSIs are mounted on an MCM using the 150 μm, very-thin-pitch, outer lead TAB technique. In addition, a high-performance heat-pipe cooling technique is adopted. The switching module handles ATM cell rates of up to 80Gbit/s and so will support the future B-ISDN.

AB - An 80Gbit/s high-speed multichip ATM switching module for broadband ISDN is described. The module employs a copper-polyimide MCM with four-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. All MCMs are interconnected by 98-highway flexible printed circuit connectors. Four Si-bipolar VLSIs are mounted on an MCM using the 150 μm, very-thin-pitch, outer lead TAB technique. In addition, a high-performance heat-pipe cooling technique is adopted. The switching module handles ATM cell rates of up to 80Gbit/s and so will support the future B-ISDN.

KW - Asynchronous transfer mode

KW - Multichip modules

KW - Printed circuits

KW - Switching circuits

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80 Gbit/s ATM switching module based on copper-polyimide MCM

Abstract

Keywords

ASJC Scopus subject areas

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