A 0.12V fully integrated charge pump with gate voltage optimization for energy harvesting applications

Yi Tan, Yohsuke Shiiki, Hiroki Ishikuro

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a fully integrated charge pump with gate voltage optimization for energy harvesting applications. In this paper, the benefits of powering a multistage charge pump with its own output are analyzed and the optimization of gate voltage are discussed. With optimized gate voltages, a 5-stage and a 3-stage charge pump are implemented with 180nm CMOS technique. Down to 0.12V/0.13V startup voltages are achieved by the proposed 5/3-stage design correspondingly. Comparing with a similar 3-stage linear charge pump in previous state-of-the-art research, a 20% peak power conversion efficiency improvement is achieved by the proposed design under the same 0.18 V input voltage.

Original languageEnglish
Title of host publication2020 IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728133201
Publication statusPublished - 2020
Event52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020 - Virtual, Online
Duration: 2020 Oct 102020 Oct 21

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
Volume2020-October
ISSN (Print)0271-4310

Conference

Conference52nd IEEE International Symposium on Circuits and Systems, ISCAS 2020
CityVirtual, Online
Period20/10/1020/10/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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