A 12Gb/s non-contact interface with coupled transmission lines

Tsutomu Takeya, Lan Nan, Shinya Nakano, Noriyuki Miura, Hiroki Ishikuro, Tadahiro Kuroda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

23 Citations (Scopus)

Abstract

The expanding capacity of today's memory cards and increasing speed of processors have created demands for high data rate interfaces between memory cards and processors. Compared to conventional contact pins, wireless interfaces have received tremendous interest for reasons of more convenience, higher reliability, and higher data rate. Two major types of near-field wireless communication techniques using capacitive coupling and inductive coupling channels have been investigated. Tens of Gb/s/ch is achieved using both methods with a communication distance of tens of microns in TCI (thru-chip-interface) applications [1-2]. However, when the communication distance denters the mm range in such applications as non-contact memory cards, the sizes of capacitors or inductors must be up scaled to detect enough electrical flux or magnetic flux, whose magnitude decay as 1/dn (n>1). As a result, the self-resonance frequency fSR is reduced significantly, which becomes the dominant limiting factor for the achievable data rate, since the maximum data rate is usually chosen as 1/2 or 1/3 of fSR in order to avoid signal peaking [3]. Although multi-channel solutions are viable to increase the total data rate, complex systems are required to address the skew issues in synchronization, and low area efficiency is resulted to reduce crosstalk interferences as shown in Fig. 28.3.1.

Original languageEnglish
Title of host publicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Pages492-493
Number of pages2
DOIs
Publication statusPublished - 2011
Event2011 IEEE International Solid-State Circuits Conference, ISSCC 2011 - San Francisco, CA, United States
Duration: 2011 Feb 202011 Feb 24

Other

Other2011 IEEE International Solid-State Circuits Conference, ISSCC 2011
CountryUnited States
CitySan Francisco, CA
Period11/2/2011/2/24

Fingerprint

Electric lines
Data storage equipment
Interfaces (computer)
Program processors
Communication
Magnetic flux
Crosstalk
Large scale systems
Synchronization
Capacitors
Fluxes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Takeya, T., Nan, L., Nakano, S., Miura, N., Ishikuro, H., & Kuroda, T. (2011). A 12Gb/s non-contact interface with coupled transmission lines. In Digest of Technical Papers - IEEE International Solid-State Circuits Conference (pp. 492-493). [5746411] https://doi.org/10.1109/ISSCC.2011.5746411

A 12Gb/s non-contact interface with coupled transmission lines. / Takeya, Tsutomu; Nan, Lan; Nakano, Shinya; Miura, Noriyuki; Ishikuro, Hiroki; Kuroda, Tadahiro.

Digest of Technical Papers - IEEE International Solid-State Circuits Conference. 2011. p. 492-493 5746411.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takeya, T, Nan, L, Nakano, S, Miura, N, Ishikuro, H & Kuroda, T 2011, A 12Gb/s non-contact interface with coupled transmission lines. in Digest of Technical Papers - IEEE International Solid-State Circuits Conference., 5746411, pp. 492-493, 2011 IEEE International Solid-State Circuits Conference, ISSCC 2011, San Francisco, CA, United States, 11/2/20. https://doi.org/10.1109/ISSCC.2011.5746411
Takeya T, Nan L, Nakano S, Miura N, Ishikuro H, Kuroda T. A 12Gb/s non-contact interface with coupled transmission lines. In Digest of Technical Papers - IEEE International Solid-State Circuits Conference. 2011. p. 492-493. 5746411 https://doi.org/10.1109/ISSCC.2011.5746411
Takeya, Tsutomu ; Nan, Lan ; Nakano, Shinya ; Miura, Noriyuki ; Ishikuro, Hiroki ; Kuroda, Tadahiro. / A 12Gb/s non-contact interface with coupled transmission lines. Digest of Technical Papers - IEEE International Solid-State Circuits Conference. 2011. pp. 492-493
@inproceedings{65c7d00310394ae58ea9f30fb1fa7795,
title = "A 12Gb/s non-contact interface with coupled transmission lines",
abstract = "The expanding capacity of today's memory cards and increasing speed of processors have created demands for high data rate interfaces between memory cards and processors. Compared to conventional contact pins, wireless interfaces have received tremendous interest for reasons of more convenience, higher reliability, and higher data rate. Two major types of near-field wireless communication techniques using capacitive coupling and inductive coupling channels have been investigated. Tens of Gb/s/ch is achieved using both methods with a communication distance of tens of microns in TCI (thru-chip-interface) applications [1-2]. However, when the communication distance denters the mm range in such applications as non-contact memory cards, the sizes of capacitors or inductors must be up scaled to detect enough electrical flux or magnetic flux, whose magnitude decay as 1/dn (n>1). As a result, the self-resonance frequency fSR is reduced significantly, which becomes the dominant limiting factor for the achievable data rate, since the maximum data rate is usually chosen as 1/2 or 1/3 of fSR in order to avoid signal peaking [3]. Although multi-channel solutions are viable to increase the total data rate, complex systems are required to address the skew issues in synchronization, and low area efficiency is resulted to reduce crosstalk interferences as shown in Fig. 28.3.1.",
author = "Tsutomu Takeya and Lan Nan and Shinya Nakano and Noriyuki Miura and Hiroki Ishikuro and Tadahiro Kuroda",
year = "2011",
doi = "10.1109/ISSCC.2011.5746411",
language = "English",
isbn = "9781612843001",
pages = "492--493",
booktitle = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

}

TY - GEN

T1 - A 12Gb/s non-contact interface with coupled transmission lines

AU - Takeya, Tsutomu

AU - Nan, Lan

AU - Nakano, Shinya

AU - Miura, Noriyuki

AU - Ishikuro, Hiroki

AU - Kuroda, Tadahiro

PY - 2011

Y1 - 2011

N2 - The expanding capacity of today's memory cards and increasing speed of processors have created demands for high data rate interfaces between memory cards and processors. Compared to conventional contact pins, wireless interfaces have received tremendous interest for reasons of more convenience, higher reliability, and higher data rate. Two major types of near-field wireless communication techniques using capacitive coupling and inductive coupling channels have been investigated. Tens of Gb/s/ch is achieved using both methods with a communication distance of tens of microns in TCI (thru-chip-interface) applications [1-2]. However, when the communication distance denters the mm range in such applications as non-contact memory cards, the sizes of capacitors or inductors must be up scaled to detect enough electrical flux or magnetic flux, whose magnitude decay as 1/dn (n>1). As a result, the self-resonance frequency fSR is reduced significantly, which becomes the dominant limiting factor for the achievable data rate, since the maximum data rate is usually chosen as 1/2 or 1/3 of fSR in order to avoid signal peaking [3]. Although multi-channel solutions are viable to increase the total data rate, complex systems are required to address the skew issues in synchronization, and low area efficiency is resulted to reduce crosstalk interferences as shown in Fig. 28.3.1.

AB - The expanding capacity of today's memory cards and increasing speed of processors have created demands for high data rate interfaces between memory cards and processors. Compared to conventional contact pins, wireless interfaces have received tremendous interest for reasons of more convenience, higher reliability, and higher data rate. Two major types of near-field wireless communication techniques using capacitive coupling and inductive coupling channels have been investigated. Tens of Gb/s/ch is achieved using both methods with a communication distance of tens of microns in TCI (thru-chip-interface) applications [1-2]. However, when the communication distance denters the mm range in such applications as non-contact memory cards, the sizes of capacitors or inductors must be up scaled to detect enough electrical flux or magnetic flux, whose magnitude decay as 1/dn (n>1). As a result, the self-resonance frequency fSR is reduced significantly, which becomes the dominant limiting factor for the achievable data rate, since the maximum data rate is usually chosen as 1/2 or 1/3 of fSR in order to avoid signal peaking [3]. Although multi-channel solutions are viable to increase the total data rate, complex systems are required to address the skew issues in synchronization, and low area efficiency is resulted to reduce crosstalk interferences as shown in Fig. 28.3.1.

UR - http://www.scopus.com/inward/record.url?scp=79955712454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955712454&partnerID=8YFLogxK

U2 - 10.1109/ISSCC.2011.5746411

DO - 10.1109/ISSCC.2011.5746411

M3 - Conference contribution

SN - 9781612843001

SP - 492

EP - 493

BT - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

ER -