A monolithic integrated 1.5 Gbit/s high-speed four-channel OEIC selector GaAs LSI has been fabricated. This LSI incorporates photodetectors, preamplifiers, a selector, a decision circuit, and a high-speed laser driver. To achieve high efficiency, a AuGe/Ni-GaAs structured ohmic contact metal-semiconductor-metal (OC-MSM) is used for the interdigitated structural photodetector. With this OC-MSM structure, photocurrent is approximately twice as effective as with the conventional Schottky contact MSM structure. The new LSI has a maximum operating speed of 1.5 Gbit/s and exhibits low power dissipation of 927 mW.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering