A 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor hybrid in 0.11-μm CMOS

Yasumoto Tomita, Hirotaka Tamura, Masaya Kibune, Junji Ogawa, Kohtaro Gotoh, Tadahiro Kuroda

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This paper presents a 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11-μm CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm2 and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10-12. The area and power overhead due to the hybrid are 0.002 mm2 and 7 mW, and correspond to 0.2% and 3% of the total transceiver area and power consumption.

Original languageEnglish
Pages (from-to)627-636
Number of pages10
JournalIEEE Journal of Solid-State Circuits
Volume42
Issue number3
DOIs
Publication statusPublished - 2007 Mar

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Transceivers
Resistors
Bit error rate
Electric power utilization
Electric potential

Keywords

  • Bidirectional
  • CMOS
  • Hybrid
  • Low-power
  • Transceiver

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

A 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor hybrid in 0.11-μm CMOS. / Tomita, Yasumoto; Tamura, Hirotaka; Kibune, Masaya; Ogawa, Junji; Gotoh, Kohtaro; Kuroda, Tadahiro.

In: IEEE Journal of Solid-State Circuits, Vol. 42, No. 3, 03.2007, p. 627-636.

Research output: Contribution to journalArticle

Tomita, Yasumoto ; Tamura, Hirotaka ; Kibune, Masaya ; Ogawa, Junji ; Gotoh, Kohtaro ; Kuroda, Tadahiro. / A 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor hybrid in 0.11-μm CMOS. In: IEEE Journal of Solid-State Circuits. 2007 ; Vol. 42, No. 3. pp. 627-636.
@article{02c9dd5ffc4842a68d5b453acb3d2c36,
title = "A 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor hybrid in 0.11-μm CMOS",
abstract = "This paper presents a 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11-μm CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm2 and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10-12. The area and power overhead due to the hybrid are 0.002 mm2 and 7 mW, and correspond to 0.2{\%} and 3{\%} of the total transceiver area and power consumption.",
keywords = "Bidirectional, CMOS, Hybrid, Low-power, Transceiver",
author = "Yasumoto Tomita and Hirotaka Tamura and Masaya Kibune and Junji Ogawa and Kohtaro Gotoh and Tadahiro Kuroda",
year = "2007",
month = "3",
doi = "10.1109/JSSC.2006.891719",
language = "English",
volume = "42",
pages = "627--636",
journal = "IEEE Journal of Solid-State Circuits",
issn = "0018-9200",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

TY - JOUR

T1 - A 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor hybrid in 0.11-μm CMOS

AU - Tomita, Yasumoto

AU - Tamura, Hirotaka

AU - Kibune, Masaya

AU - Ogawa, Junji

AU - Gotoh, Kohtaro

AU - Kuroda, Tadahiro

PY - 2007/3

Y1 - 2007/3

N2 - This paper presents a 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11-μm CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm2 and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10-12. The area and power overhead due to the hybrid are 0.002 mm2 and 7 mW, and correspond to 0.2% and 3% of the total transceiver area and power consumption.

AB - This paper presents a 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11-μm CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm2 and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10-12. The area and power overhead due to the hybrid are 0.002 mm2 and 7 mW, and correspond to 0.2% and 3% of the total transceiver area and power consumption.

KW - Bidirectional

KW - CMOS

KW - Hybrid

KW - Low-power

KW - Transceiver

UR - http://www.scopus.com/inward/record.url?scp=33847749277&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847749277&partnerID=8YFLogxK

U2 - 10.1109/JSSC.2006.891719

DO - 10.1109/JSSC.2006.891719

M3 - Article

VL - 42

SP - 627

EP - 636

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

SN - 0018-9200

IS - 3

ER -