A 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor hybrid in 0.11-μm CMOS

Yasumoto Tomita, Hirotaka Tamura, Masaya Kibune, Junji Ogawa, Kohtaro Gotoh, Tadahiro Kuroda

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Abstract

This paper presents a 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11-μm CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm2 and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10-12. The area and power overhead due to the hybrid are 0.002 mm2 and 7 mW, and correspond to 0.2% and 3% of the total transceiver area and power consumption.

Original languageEnglish
Pages (from-to)627-636
Number of pages10
JournalIEEE Journal of Solid-State Circuits
Volume42
Issue number3
DOIs
Publication statusPublished - 2007 Mar

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Keywords

  • Bidirectional
  • CMOS
  • Hybrid
  • Low-power
  • Transceiver

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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