A 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor hybrid in 0.11-μm CMOS

Yasumoto Tomita, Hirotaka Tamura, Masaya Kibune, Junji Ogawa, Kohtaro Gotoh, Tadahiro Kuroda

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    This paper presents a 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11-μm CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm2 and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10-12. The area and power overhead due to the hybrid are 0.002 mm2 and 7 mW, and correspond to 0.2% and 3% of the total transceiver area and power consumption.

    Original languageEnglish
    Pages (from-to)627-636
    Number of pages10
    JournalIEEE Journal of Solid-State Circuits
    Volume42
    Issue number3
    DOIs
    Publication statusPublished - 2007 Mar 1

    Keywords

    • Bidirectional
    • CMOS
    • Hybrid
    • Low-power
    • Transceiver

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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