A 30 Gb/s/Link 2.2 Tb/s/mm2 inductively-coupled injection-locking CDR for high-speed DRAM interface

Yasuhiro Take; Noriyuki Miura; Tadahiro Kuroda

doi:10.1109/JSSC.2011.2164023

A 30 Gb/s/Link 2.2 Tb/s/mm² inductively-coupled injection-locking CDR for high-speed DRAM interface

Yasuhiro Take, Noriyuki Miura, Tadahiro Kuroda

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

This paper presents a 30 Gb/s/link 2.2 Tb/s/mm² inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, the proposed technique doubles the operation speed and increases the data rate to 30 Gb/s/link. As a result, the data rate per layout area is increased to 2.2 Tb/s/mm² , which is 2X that of the state-of-the-art inductive-coupling link, and 22X that of the state-of-the-art wired link.

Original language	English
Article number	5997296
Pages (from-to)	2552-2559
Number of pages	8
Journal	IEEE Journal of Solid-State Circuits
Volume	46
Issue number	11
DOIs	https://doi.org/10.1109/JSSC.2011.2164023
Publication status	Published - 2011 Nov

Keywords

DRAM
Inductive coupling
clock data recovery (CDR)
injection-locking
three-dimensional
wireless interconnect

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/JSSC.2011.2164023

Cite this

@article{5b4c5a21db9a4a28b99f9b6e5d47e076,

title = "A 30 Gb/s/Link 2.2 Tb/s/mm2 inductively-coupled injection-locking CDR for high-speed DRAM interface",

abstract = "This paper presents a 30 Gb/s/link 2.2 Tb/s/mm2 inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, the proposed technique doubles the operation speed and increases the data rate to 30 Gb/s/link. As a result, the data rate per layout area is increased to 2.2 Tb/s/mm2 , which is 2X that of the state-of-the-art inductive-coupling link, and 22X that of the state-of-the-art wired link.",

keywords = "DRAM, Inductive coupling, clock data recovery (CDR), injection-locking, three-dimensional, wireless interconnect",

author = "Yasuhiro Take and Noriyuki Miura and Tadahiro Kuroda",

note = "Funding Information: Manuscript received February 18, 2011; revised May 29, 2011; accepted July 25, 2011. Date of publication August 30, 2011; date of current version October 26, 2011. This paper was approved by Guest Editor Muneo Fukaishi. This work was supported by CREST/JST.",

year = "2011",

month = nov,

doi = "10.1109/JSSC.2011.2164023",

language = "English",

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T1 - A 30 Gb/s/Link 2.2 Tb/s/mm2 inductively-coupled injection-locking CDR for high-speed DRAM interface

AU - Take, Yasuhiro

AU - Miura, Noriyuki

AU - Kuroda, Tadahiro

N1 - Funding Information: Manuscript received February 18, 2011; revised May 29, 2011; accepted July 25, 2011. Date of publication August 30, 2011; date of current version October 26, 2011. This paper was approved by Guest Editor Muneo Fukaishi. This work was supported by CREST/JST.

PY - 2011/11

Y1 - 2011/11

N2 - This paper presents a 30 Gb/s/link 2.2 Tb/s/mm2 inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, the proposed technique doubles the operation speed and increases the data rate to 30 Gb/s/link. As a result, the data rate per layout area is increased to 2.2 Tb/s/mm2 , which is 2X that of the state-of-the-art inductive-coupling link, and 22X that of the state-of-the-art wired link.

AB - This paper presents a 30 Gb/s/link 2.2 Tb/s/mm2 inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, the proposed technique doubles the operation speed and increases the data rate to 30 Gb/s/link. As a result, the data rate per layout area is increased to 2.2 Tb/s/mm2 , which is 2X that of the state-of-the-art inductive-coupling link, and 22X that of the state-of-the-art wired link.

KW - DRAM

KW - Inductive coupling

KW - clock data recovery (CDR)

KW - injection-locking

KW - three-dimensional

KW - wireless interconnect

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