A 30 Gb/s/Link 2.2 Tb/s/mm2 inductively-coupled injection-locking CDR for high-speed DRAM interface

Yasuhiro Take; Noriyuki Miura; Tadahiro Kuroda

doi:10.1109/JSSC.2011.2164023

A 30 Gb/s/Link 2.2 Tb/s/mm² inductively-coupled injection-locking CDR for high-speed DRAM interface

Yasuhiro Take, Noriyuki Miura, Tadahiro Kuroda

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

This paper presents a 30 Gb/s/link 2.2 Tb/s/mm² inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, the proposed technique doubles the operation speed and increases the data rate to 30 Gb/s/link. As a result, the data rate per layout area is increased to 2.2 Tb/s/mm² , which is 2X that of the state-of-the-art inductive-coupling link, and 22X that of the state-of-the-art wired link.

Original language	English
Article number	5997296
Pages (from-to)	2552-2559
Number of pages	8
Journal	IEEE Journal of Solid-State Circuits
Volume	46
Issue number	11
DOIs	https://doi.org/10.1109/JSSC.2011.2164023
Publication status	Published - 2011 Nov 1

Keywords

DRAM
Inductive coupling
clock data recovery (CDR)
injection-locking
three-dimensional
wireless interconnect

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/JSSC.2011.2164023

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Take, Y., Miura, N., & Kuroda, T. (2011). A 30 Gb/s/Link 2.2 Tb/s/mm² inductively-coupled injection-locking CDR for high-speed DRAM interface. IEEE Journal of Solid-State Circuits, 46(11), 2552-2559. [5997296]. https://doi.org/10.1109/JSSC.2011.2164023

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