A 30 Gb/s/Link 2.2 Tb/s/mm2 inductively-coupled injection-locking CDR for high-speed DRAM interface

Yasuhiro Take, Noriyuki Miura, Tadahiro Kuroda

    Research output: Contribution to journalArticlepeer-review

    19 Citations (Scopus)


    This paper presents a 30 Gb/s/link 2.2 Tb/s/mm2 inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, the proposed technique doubles the operation speed and increases the data rate to 30 Gb/s/link. As a result, the data rate per layout area is increased to 2.2 Tb/s/mm2 , which is 2X that of the state-of-the-art inductive-coupling link, and 22X that of the state-of-the-art wired link.

    Original languageEnglish
    Article number5997296
    Pages (from-to)2552-2559
    Number of pages8
    JournalIEEE Journal of Solid-State Circuits
    Issue number11
    Publication statusPublished - 2011 Nov


    • DRAM
    • Inductive coupling
    • clock data recovery (CDR)
    • injection-locking
    • three-dimensional
    • wireless interconnect

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering


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