A 30Gb/s/link 2.2Tb/s/mm2 inductively-coupled injection-locking CDR

Yasuhiro Take, Noriyuki Miura, Tadahiro Kuroda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents a 30Gb/s/link 2.2Tb/s/mm2 inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now [1-11]. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, our technique doubles the operation speed and increases the data rate to 30Gb/s/link. As a result, the data rate per layout area is increased to 2.2Tb/s/mm2, which is 2X that of the state-of-the-art inductive-coupling link [1], and 22X that of the state-of-the-art wired link [3].

Original languageEnglish
Title of host publication2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010
Pages81-84
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 6th IEEE Asian Solid-State Circuits Conference, A-SSCC 2010 - Beijing, China
Duration: 2010 Nov 82010 Nov 10

Other

Other2010 6th IEEE Asian Solid-State Circuits Conference, A-SSCC 2010
CountryChina
CityBeijing
Period10/11/810/11/10

Fingerprint

Dynamic random access storage
Derivatives
Detectors

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Take, Y., Miura, N., & Kuroda, T. (2010). A 30Gb/s/link 2.2Tb/s/mm2 inductively-coupled injection-locking CDR. In 2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010 (pp. 81-84). [5716562] https://doi.org/10.1109/ASSCC.2010.5716562

A 30Gb/s/link 2.2Tb/s/mm2 inductively-coupled injection-locking CDR. / Take, Yasuhiro; Miura, Noriyuki; Kuroda, Tadahiro.

2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010. 2010. p. 81-84 5716562.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Take, Y, Miura, N & Kuroda, T 2010, A 30Gb/s/link 2.2Tb/s/mm2 inductively-coupled injection-locking CDR. in 2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010., 5716562, pp. 81-84, 2010 6th IEEE Asian Solid-State Circuits Conference, A-SSCC 2010, Beijing, China, 10/11/8. https://doi.org/10.1109/ASSCC.2010.5716562
Take Y, Miura N, Kuroda T. A 30Gb/s/link 2.2Tb/s/mm2 inductively-coupled injection-locking CDR. In 2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010. 2010. p. 81-84. 5716562 https://doi.org/10.1109/ASSCC.2010.5716562
Take, Yasuhiro ; Miura, Noriyuki ; Kuroda, Tadahiro. / A 30Gb/s/link 2.2Tb/s/mm2 inductively-coupled injection-locking CDR. 2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010. 2010. pp. 81-84
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