A 30Gb/s/link 2.2Tb/s/mm2 inductively-coupled injection-locking CDR

Yasuhiro Take, Noriyuki Miura, Tadahiro Kuroda

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    This paper presents a 30Gb/s/link 2.2Tb/s/mm2 inductive-coupling link for a high-speed DRAM interface. The data rate per layout area is the highest among DRAM interfaces reported up to now [1-11]. The proposed interface employs a high-speed injection-locking CDR technique that utilizes the derivative property of inductive coupling. Compared to conventional injection-locking CDR based on an XOR edge detector, our technique doubles the operation speed and increases the data rate to 30Gb/s/link. As a result, the data rate per layout area is increased to 2.2Tb/s/mm2, which is 2X that of the state-of-the-art inductive-coupling link [1], and 22X that of the state-of-the-art wired link [3].

    Original languageEnglish
    Title of host publication2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010
    Pages81-84
    Number of pages4
    DOIs
    Publication statusPublished - 2010 Dec 1
    Event2010 6th IEEE Asian Solid-State Circuits Conference, A-SSCC 2010 - Beijing, China
    Duration: 2010 Nov 82010 Nov 10

    Publication series

    Name2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010

    Other

    Other2010 6th IEEE Asian Solid-State Circuits Conference, A-SSCC 2010
    CountryChina
    CityBeijing
    Period10/11/810/11/10

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering

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  • Cite this

    Take, Y., Miura, N., & Kuroda, T. (2010). A 30Gb/s/link 2.2Tb/s/mm2 inductively-coupled injection-locking CDR. In 2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010 (pp. 81-84). [5716562] (2010 IEEE Asian Solid-State Circuits Conference, A-SSCC 2010). https://doi.org/10.1109/ASSCC.2010.5716562