A 60MHz 240mW MPEG-4 video-phone LSI with 16Mb embedded DRAM

T. Nishikawa, M. Takahashi, M. Hamada, T. Takayanagi, H. Arakida, N. Machida, H. Yamamoto, T. Fujiyoshi, Y. Matsumoto, O. Yamagishi, T. Samata, A. Asano, T. Terazawa, K. Ohmori, J. Shirakura, Y. Watanabe, H. Nakamura, S. Minami, Tadahiro Kuroda, T. Furuyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

54 Citations (Scopus)

Abstract

The fabrication of a 240 m W single-chip MPEG-4 video-phone LSI with a 16 Mb embedded dynamic random access storage (DRAM) was discussed. The device integrated camera, display and audio interfaces and employed threshold voltage complementary metal oxide semiconductor CMOS (VTCMOS) technology to reduce standby leakage currents. The embedded DRAM reduced the power dissipation for input/output circuit and for the interface between external DRAM and the processors. The results indicated that the power-on-shunt circuit did not dissipate power after power-up.

Original languageEnglish
Title of host publicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Pages230-231
Number of pages2
Publication statusPublished - 2000
Externally publishedYes
Event2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC - San Francisco, CA, United States
Duration: 2000 Feb 72000 Feb 9

Other

Other2000 IEEE International Solid-State Circuits Conference 47th Annual ISSCC
CountryUnited States
CitySan Francisco, CA
Period00/2/700/2/9

    Fingerprint

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Nishikawa, T., Takahashi, M., Hamada, M., Takayanagi, T., Arakida, H., Machida, N., ... Furuyama, T. (2000). A 60MHz 240mW MPEG-4 video-phone LSI with 16Mb embedded DRAM. In Digest of Technical Papers - IEEE International Solid-State Circuits Conference (pp. 230-231)