Abstract
A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G-1 and wide frequency response of 200 Hz have been achieved.
| Original language | English |
|---|---|
| Pages (from-to) | 267-272 |
| Number of pages | 6 |
| Journal | Sensors and Actuators, A: Physical |
| Volume | 53 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 1996 May |
| Externally published | Yes |
Keywords
- Capacitance-voltage converters
- Capacitive accelerometers
- Damping control
- Silicon direct bonding
- Silicon on insulator
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering