A capacitive accelerometer using SDB-SOI structure

Yoshinori Matsumoto, Moritaka Iwakiri, Hidekazu Tanaka, Makoto Ishida, Tetsuro Nakamura

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G-1 and wide frequency response of 200 Hz have been achieved.

Original languageEnglish
Pages (from-to)267-272
Number of pages6
JournalSensors and Actuators, A: Physical
Volume53
Issue number1-3
DOIs
Publication statusPublished - 1996 May
Externally publishedYes

Keywords

  • Capacitance-voltage converters
  • Capacitive accelerometers
  • Damping control
  • Silicon direct bonding
  • Silicon on insulator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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