TY - JOUR
T1 - A capacitive accelerometer using SDB-SOI structure
AU - Matsumoto, Yoshinori
AU - Iwakiri, Moritaka
AU - Tanaka, Hidekazu
AU - Ishida, Makoto
AU - Nakamura, Tetsuro
N1 - Funding Information:
This work has been partly supported by the Japanese Ministry of Education, Science and Culture under a Grant-in-Aid for Developmental Scientific Research No. 06555102, and also partly supported by a Foundation Advanced Technology Institute Research Grant. The author is grateful for information about the TI28882D from Texas Instruments Japan Limited.
PY - 1996/5
Y1 - 1996/5
N2 - A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G-1 and wide frequency response of 200 Hz have been achieved.
AB - A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G-1 and wide frequency response of 200 Hz have been achieved.
KW - Capacitance-voltage converters
KW - Capacitive accelerometers
KW - Damping control
KW - Silicon direct bonding
KW - Silicon on insulator
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U2 - 10.1016/0924-4247(96)01154-5
DO - 10.1016/0924-4247(96)01154-5
M3 - Article
AN - SCOPUS:0011075708
VL - 53
SP - 267
EP - 272
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
SN - 0924-4247
IS - 1-3
ER -