A capacitive accelerometer using SDB-SOI structure

Yoshinori Matsumoto; Moritaka Iwakiri; Hidekazu Tanaka; Makoto Ishida; Tetsuro Nakamura

doi:10.1016/0924-4247(96)01154-5

A capacitive accelerometer using SDB-SOI structure

Yoshinori Matsumoto, Moritaka Iwakiri, Hidekazu Tanaka, Makoto Ishida, Tetsuro Nakamura

Research output: Contribution to journal › Article

26 Citations (Scopus)

Abstract

A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G^-1 and wide frequency response of 200 Hz have been achieved.

Original language	English
Pages (from-to)	267-272
Number of pages	6
Journal	Sensors and Actuators, A: Physical
Volume	53
Issue number	1-3
DOIs	https://doi.org/10.1016/0924-4247(96)01154-5
Publication status	Published - 1996 May
Externally published	Yes

Keywords

Capacitance-voltage converters
Capacitive accelerometers
Damping control
Silicon direct bonding
Silicon on insulator

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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Matsumoto, Y., Iwakiri, M., Tanaka, H., Ishida, M., & Nakamura, T. (1996). A capacitive accelerometer using SDB-SOI structure. Sensors and Actuators, A: Physical, 53(1-3), 267-272. https://doi.org/10.1016/0924-4247(96)01154-5

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keywords = "Capacitance-voltage converters, Capacitive accelerometers, Damping control, Silicon direct bonding, Silicon on insulator",

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AU - Nakamura, Tetsuro

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