Abstract
A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G-1 and wide frequency response of 200 Hz have been achieved.
| Original language | English |
|---|---|
| Pages (from-to) | 267-272 |
| Number of pages | 6 |
| Journal | Sensors and Actuators, A: Physical |
| Volume | 53 |
| Issue number | 1-3 |
| Publication status | Published - 1996 May |
| Externally published | Yes |
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Keywords
- Capacitance-voltage converters
- Capacitive accelerometers
- Damping control
- Silicon direct bonding
- Silicon on insulator
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Mechanical Engineering
- Instrumentation
Cite this
A capacitive accelerometer using SDB-SOI structure. / Matsumoto, Yoshinori; Iwakiri, Moritaka; Tanaka, Hidekazu; Ishida, Makoto; Nakamura, Tetsuro.
In: Sensors and Actuators, A: Physical, Vol. 53, No. 1-3, 05.1996, p. 267-272.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A capacitive accelerometer using SDB-SOI structure
AU - Matsumoto, Yoshinori
AU - Iwakiri, Moritaka
AU - Tanaka, Hidekazu
AU - Ishida, Makoto
AU - Nakamura, Tetsuro
PY - 1996/5
Y1 - 1996/5
N2 - A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G-1 and wide frequency response of 200 Hz have been achieved.
AB - A capacitive accelerometer using SDB-SOI (silicon direct bonding -silicon on insulator) structure has been developed. The mass and beams of the accelerometer are fabricated with a single-crystal silicon layer 10 μm thick. The beam is formed in a spiral shape to the obtain longest beam in the minimum area. The silicon dioxide layer is etched sacrificially, which determines the capacitance gap as 1 μm. Seven kinds of accelerometers for different measurement ranges have been integrated in the same chip. The capacitance changes of the accelerometers are detected by a capacitance to voltage converter IC (TI28882D), and the output characteristics evaluated. As a result, a high sensitivity of 200 mV G-1 and wide frequency response of 200 Hz have been achieved.
KW - Capacitance-voltage converters
KW - Capacitive accelerometers
KW - Damping control
KW - Silicon direct bonding
KW - Silicon on insulator
UR - http://www.scopus.com/inward/record.url?scp=0011075708&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0011075708&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0011075708
VL - 53
SP - 267
EP - 272
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
SN - 0924-4247
IS - 1-3
ER -