A comparative study of the effects of sputtering deposition conditions for ZnO surface electrode layers on Cu(In,Ga)Se2 and CuGaSe2 solar cells

Shogo Ishizuka, Paul J. Fons, Hajime Shibata

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The effects of post p-n junction formation processes, namely transparent conducting oxide (TCO) layer deposition conditions on Cu(In,Ga)Se2 (CIGS) and CuGaSe2 (CGS) solar cell device properties were comparatively studied. It was found that CIGS devices were relatively insensitive to the presence of oxygen and heat during TCO layer deposition, whereas CGS devices were extremely sensitive to oxygen and heat, resulting in a degradation of device performance in the presence of them. The use of the relatively low TCO deposition temperature (Ts) of 80 °C led to significant improvements in the fill factor values of CGS devices compared to the case for Ts ~ 180 °C, though the open circuit voltage was reduced. These results suggest that TCO deposition conditions can be an important parameter which critically affects ternary CGS solar cell device properties. It is, therefore, suggested that TCO layer deposition conditions for CGS devices should be optimized independently of that for conventional narrow-gap CIGS devices.

Original languageEnglish
Pages (from-to)49-54
Number of pages6
JournalThin Solid Films
Volume633
DOIs
Publication statusPublished - 2017 Jul 1
Externally publishedYes

Keywords

  • Copper gallium selenide
  • Copper indium gallium selenide
  • Interface
  • Solar cells
  • Wide-gap chalcopyrite

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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