A computational investigation of the RF plasma structures and their production efficiency in the frequency range from HF to VHF

T. Kitamura, Nobuhiko Nakano, T. Makabe, Y. Yamaguchi

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

The influence of driving frequency on discharge structure and production efficiency has been investigated in Ar over the frequency range from 13.56 MHz to 100 MHz in terms of the relaxation continuum model. Under constant RF voltage, the plasma density increases in proportion to the square of the driving frequency. The net ionization and excitation rates, and the power density, show the same frequency dependence, although the collisional production efficiency per input power density is almost invariant with change of frequency. This has the great advantage for plasma processing and deposition from plasmas that parallel plate discharge in very high frequency (VHF) will lead to the system being rather free from ion damage or effects of confined plasma volume as compared with those in high frequency (HF) and microwave (MW).

Original languageEnglish
Article number010
Pages (from-to)40-45
Number of pages6
JournalPlasma Sources Science and Technology
Volume2
Issue number1
DOIs
Publication statusPublished - 1993

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Physics and Astronomy(all)

Cite this