A dislocation-crystal plasticity simulation on large deformation considering geometrically necessary dislocation density and incompatibility (2nd report, application to FCC single crystal)

Yoshiteru Aoyagi, Kazuyuki Shizawa

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1 Citation (Scopus)


In the previous paper, the GN incompatibility is newly defined and a new annihilation term of a dislocation pair due to the dynamic recovery is introduced into an expression of dislocation density. Furthermore, a multiscale model of crystal plasticity is proposed by considering GN dislocation density and incompatibility. However, details of dislocation-crystal plasticity simulation are not given. In this paper, we explain a method of dislocation-crystal plasticity analysis. A finite element simulation is carried out for an f.c.c. single crystal under plane strain tension. It is numerically predicted that micro shear bands are formed at large strain, and sub-GNBs: small angle tilt boundaries are induced along these bands. Furthermore, the annihilation of dislocation pair and the increase of dislocation mean free path characterizing stage III of work-hardening are computationally predicted.

Original languageEnglish
Pages (from-to)1646-1653
Number of pages8
JournalNihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
Issue number11
Publication statusPublished - 2006 Nov 1



  • Crystal plasticity
  • Dislocation
  • Dynamic recovery
  • Finite element method
  • Geometrically necessary dislocation
  • Incompatibility
  • Plasticity

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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