A dressed spin qubit in silicon

Arne Laucht, Rachpon Kalra, Stephanie Simmons, Juan P. Dehollain, Juha T. Muhonen, Fahd A. Mohiyaddin, Solomon Freer, Fay E. Hudson, Kohei M Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, A. Morello

Research output: Contribution to journalArticle

25 Citations (Scopus)


Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties—a different and easily tunable level splitting, faster control and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and assess its potential as a quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, frequency modulation of the driving field or a simple detuning pulse. We measure coherence times of and , one order of magnitude longer than those of the undressed spin. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.

Original languageEnglish
JournalNature Nanotechnology
Publication statusAccepted/In press - 2016 Oct 17


ASJC Scopus subject areas

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Laucht, A., Kalra, R., Simmons, S., Dehollain, J. P., Muhonen, J. T., Mohiyaddin, F. A., Freer, S., Hudson, F. E., Itoh, K. M., Jamieson, D. N., McCallum, J. C., Dzurak, A. S., & Morello, A. (Accepted/In press). A dressed spin qubit in silicon. Nature Nanotechnology. https://doi.org/10.1038/nnano.2016.178