A first-principles core-level XPS study on the boron impurities in germanium crystal

Jun Yamauchi, Yoshihide Yoshimoto, Yuji Suwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We systematically investigated the x-ray photoelectron spectroscopy (XPS) core-level shifts and formation energies of boron defects in germanium crystals and compared the results to those in silicon crystals. Both for XPS core-level shifts and formation energies, relationship between defects in Si and Ge is roughly linear. From the similarity in the formation energy, it is expected that the exotic clusters like icosahedral B12 exist in Ge as well as in Si.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages41-42
Number of pages2
ISBN (Print)9780735411944
DOIs
Publication statusPublished - 2013 Jan 1
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: 2012 Jul 292012 Aug 3

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other31st International Conference on the Physics of Semiconductors, ICPS 2012
CountrySwitzerland
CityZurich
Period12/7/2912/8/3

Keywords

  • XPS(x-ray photoelectron spectroscopy)
  • boron
  • cluster
  • defect
  • first-principles study
  • germanium

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Yamauchi, J., Yoshimoto, Y., & Suwa, Y. (2013). A first-principles core-level XPS study on the boron impurities in germanium crystal. In Physics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012 (pp. 41-42). (AIP Conference Proceedings; Vol. 1566). American Institute of Physics Inc.. https://doi.org/10.1063/1.4848275