A high gravity chemical vapor deposition apparatus

Yoshiyuki Abe, Giovanni Maizza, Noboru Sone, Yuji Nagasaka, Tetsuya Suzuki

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A high gravity centrifuge facility in which thin films can be produced, especially from gas phase, was developed. The centrifuge facility allows high gravity materials processing up to 100g (g denotes the terrestrial gravity acceleration). With a minor modification, not only thin films from gas phase but also bulk materials could be produced in the facility. For the first demonstrative attempt in this facility, diamond thin films were grown under high gravity conditions up to 100g by means of the direct current-plasma chemical vapor deposition method, in which diamond was deposited on a molybdenum substrate in a moderate pressure condition (27 kPa) of the gas flow of hydrogen-methane mixture (methane 1 vol %). The details of the facility are described, and the preliminary results on the high gravity diamond synthesis are presented.

Original languageEnglish
Pages (from-to)4225-4231
Number of pages7
JournalReview of Scientific Instruments
Volume68
Issue number11
Publication statusPublished - 1997 Nov

Fingerprint

high gravity environments
Chemical vapor deposition
Gravitation
vapor deposition
centrifuges
diamonds
Centrifuges
Thin films
Diamonds
Methane
methane
thin films
vapor phases
Diamond films
Gases
Molybdenum
molybdenum
gas flow
Flow of gases
direct current

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Instrumentation

Cite this

A high gravity chemical vapor deposition apparatus. / Abe, Yoshiyuki; Maizza, Giovanni; Sone, Noboru; Nagasaka, Yuji; Suzuki, Tetsuya.

In: Review of Scientific Instruments, Vol. 68, No. 11, 11.1997, p. 4225-4231.

Research output: Contribution to journalArticle

Abe, Yoshiyuki ; Maizza, Giovanni ; Sone, Noboru ; Nagasaka, Yuji ; Suzuki, Tetsuya. / A high gravity chemical vapor deposition apparatus. In: Review of Scientific Instruments. 1997 ; Vol. 68, No. 11. pp. 4225-4231.
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