A high-speed inductive-coupling link with burst transmission

Noriyuki Miura, Yoshinori Kohama, Yasfumi Sugimori, Hiroki Ishikuro, Takayasu Sakurai, Tadahiro Kuroda

    Research output: Contribution to journalArticle

    44 Citations (Scopus)


    A high-speed inductive-coupling link is presented. It communicates at a data rate of 11 Gb/s for a communication distance of 15 μm in 180 nm CMOS. The data rate is 11× higher than previous inductive-coupling links. The communication distance is 5× longer than a capacitive-coupling link for the same data rate, bit error rate, and layout area. Burst transmission utilizing the high-speed inductive-coupling link is also presented. Multi-bit data links are multiplexed into a single burst data link. It reduces layout area by a factor of three in 180 nm CMOS and a factor of nine in 90 nm CMOS.

    Original languageEnglish
    Article number4787576
    Pages (from-to)947-955
    Number of pages9
    JournalIEEE Journal of Solid-State Circuits
    Issue number3
    Publication statusPublished - 2009 Mar 1


    • Burst transmission
    • Data link
    • High speed
    • Inductive coupling
    • Three dimensional

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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  • Cite this

    Miura, N., Kohama, Y., Sugimori, Y., Ishikuro, H., Sakurai, T., & Kuroda, T. (2009). A high-speed inductive-coupling link with burst transmission. IEEE Journal of Solid-State Circuits, 44(3), 947-955. [4787576]. https://doi.org/10.1109/JSSC.2008.2012365