A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source

Kenta Nakagawa, Hidenori Takahashi, Yui Shimura, Hideyuki Maki

Research output: Contribution to journalArticle

Abstract

We developed a procedure for direct patterning of graphene with arbitrary position, size, and shape on silicon substrates from a solid-state carbon source without dry etching processing. Our light emitting graphene devices perform on a par with those based on high crystallinity graphene obtained via mechanical exfoliation or chemical vapor deposition.

Original languageEnglish
Pages (from-to)37906-37910
Number of pages5
JournalRSC Advances
Volume9
Issue number65
DOIs
Publication statusPublished - 2019 Jan 1

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Silicon
Graphene
Carbon
Dry etching
Substrates
Chemical vapor deposition
Processing
Graphene devices

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

A light emitter based on practicable and mass-producible polycrystalline graphene patterned directly on silicon substrates from a solid-state carbon source. / Nakagawa, Kenta; Takahashi, Hidenori; Shimura, Yui; Maki, Hideyuki.

In: RSC Advances, Vol. 9, No. 65, 01.01.2019, p. 37906-37910.

Research output: Contribution to journalArticle

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