A Magnetic Sensor with Silicon on Insulator Structure for High Temperature Applications

Yoshinori Matsumoto, Hirokazu Kawai, Tadashi Terada, Shoji Kawahito, Makoto Ishida, Teturo Nakamura

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Silicon magnetic Hall sensor for high temperature applications has been developed with Silicon-On-Insulator(SOI) structure. The Hall cell of magnetic sensor is dielectrically isolated by silicon dioxide from silicon substrate in order to reduce leakage current between the Hall cell and silicon substrate at high temperature. The theoretical sensitivity of the magnetic sensor was calculated and compared to the experimental result. There is a tradeoff between sensitivity and available temperature range. The magnetic sensor has temperature offset drifts which are caused by size mismatching, unbalance of doping condition and thermal stress between sensor and package. These offsets are compensated by design optimization and signal conditioning circuit. As a result, silicon magnetic Hall sensor with SOI structure could be operated steadily over high temperature of 200∘.

Original languageEnglish
Pages (from-to)317-324
Number of pages8
JournalIEEJ Transactions on Sensors and Micromachines
Volume116
Issue number8
DOIs
Publication statusPublished - 1996
Externally publishedYes

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A Magnetic Sensor with Silicon on Insulator Structure for High Temperature Applications'. Together they form a unique fingerprint.

  • Cite this