A possible mechanism of ultrafast amorphization in phase-change memory alloys: An ion slingshot from the crystalline to amorphous position

A. V. Kolobov, A. S. Mishchenko, P. Fons, S. M. Yakubenya, J. Tominaga

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We propose that the driving force of the ultrafast crystalline-to-amorphous transition in phase-change memory alloys is caused by strained bonds existing in the (metastable) crystalline phase. For the prototypical example of Ge 2Sb2Te5, we demonstrate that upon breaking of the longer Ge-Te bond by photoexcitation, a Ge ion is shot from an octahedral crystalline to a tetrahedral amorphous position by the uncompensated force of strained short bonds. Subsequent lattice relaxation stabilizes the tetrahedral surroundings of the Ge atoms and ensures the long-term stability of the optically induced phase.

Original languageEnglish
Article number455209
JournalJournal of Physics Condensed Matter
Volume19
Issue number45
DOIs
Publication statusPublished - 2007 Nov 14
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'A possible mechanism of ultrafast amorphization in phase-change memory alloys: An ion slingshot from the crystalline to amorphous position'. Together they form a unique fingerprint.

  • Cite this