Abstract
Recently, solid-state light-emitting devices based on small molecules such as Ru(bpy)3(PF6)2 and its derivatives attracted attention as electro luminescence (EL) materials because the luminance shows as high as l600 cd m-2 at only 5 V with spin-cast films in air without sealing the devices. Devices based on these materials operate at low voltage (2.5-5 V), however, response of light emission after applying voltage is rather slow, suggesting a similar mechanism with liquid electro-generated chemiluminescence (ECL) cells. In this paper, we added thin electron transporting layer, 2,5-bis(5-tert-butyl-2-benz-oxazolyl) thiophene (BBOT) film (ca. 200 nm) between Ru complex light-emitting layer and Al electrode. As a result, much quicker response was achieved than the ruthenium(II) complex EL devices without adding the BBOT electron transporting layer.
| Original language | English |
|---|---|
| Pages (from-to) | 149-153 |
| Number of pages | 5 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 85 |
| Issue number | 2-3 |
| DOIs | |
| Publication status | Published - 2001 Aug 22 |
Keywords
- Chemi luminescence
- Electro luminescence
- Electron transport
- Light emitting device
- Ruthenium
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering