Abstract
Recently, solid-state light-emitting devices based on small molecules such as Ru(bpy)3(PF6)2 and its derivatives attracted attention as electro luminescence (EL) materials because the luminance shows as high as l600 cd m-2 at only 5 V with spin-cast films in air without sealing the devices. Devices based on these materials operate at low voltage (2.5-5 V), however, response of light emission after applying voltage is rather slow, suggesting a similar mechanism with liquid electro-generated chemiluminescence (ECL) cells. In this paper, we added thin electron transporting layer, 2,5-bis(5-tert-butyl-2-benz-oxazolyl) thiophene (BBOT) film (ca. 200 nm) between Ru complex light-emitting layer and Al electrode. As a result, much quicker response was achieved than the ruthenium(II) complex EL devices without adding the BBOT electron transporting layer.
| Original language | English |
|---|---|
| Pages (from-to) | 149-153 |
| Number of pages | 5 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 85 |
| Issue number | 2-3 |
| DOIs | |
| Publication status | Published - 2001 Aug 22 |
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Keywords
- Chemi luminescence
- Electro luminescence
- Electron transport
- Light emitting device
- Ruthenium
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
Cite this
A quick operating organic EL device using Ru complex light-emitting layer with 2,5-bis(4-tert-butyl-2-benz-oxazolyl) thiophene electron transport layer. / Shiratori, Seimei.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 85, No. 2-3, 22.08.2001, p. 149-153.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - A quick operating organic EL device using Ru complex light-emitting layer with 2,5-bis(4-tert-butyl-2-benz-oxazolyl) thiophene electron transport layer
AU - Shiratori, Seimei
PY - 2001/8/22
Y1 - 2001/8/22
N2 - Recently, solid-state light-emitting devices based on small molecules such as Ru(bpy)3(PF6)2 and its derivatives attracted attention as electro luminescence (EL) materials because the luminance shows as high as l600 cd m-2 at only 5 V with spin-cast films in air without sealing the devices. Devices based on these materials operate at low voltage (2.5-5 V), however, response of light emission after applying voltage is rather slow, suggesting a similar mechanism with liquid electro-generated chemiluminescence (ECL) cells. In this paper, we added thin electron transporting layer, 2,5-bis(5-tert-butyl-2-benz-oxazolyl) thiophene (BBOT) film (ca. 200 nm) between Ru complex light-emitting layer and Al electrode. As a result, much quicker response was achieved than the ruthenium(II) complex EL devices without adding the BBOT electron transporting layer.
AB - Recently, solid-state light-emitting devices based on small molecules such as Ru(bpy)3(PF6)2 and its derivatives attracted attention as electro luminescence (EL) materials because the luminance shows as high as l600 cd m-2 at only 5 V with spin-cast films in air without sealing the devices. Devices based on these materials operate at low voltage (2.5-5 V), however, response of light emission after applying voltage is rather slow, suggesting a similar mechanism with liquid electro-generated chemiluminescence (ECL) cells. In this paper, we added thin electron transporting layer, 2,5-bis(5-tert-butyl-2-benz-oxazolyl) thiophene (BBOT) film (ca. 200 nm) between Ru complex light-emitting layer and Al electrode. As a result, much quicker response was achieved than the ruthenium(II) complex EL devices without adding the BBOT electron transporting layer.
KW - Chemi luminescence
KW - Electro luminescence
KW - Electron transport
KW - Light emitting device
KW - Ruthenium
UR - http://www.scopus.com/inward/record.url?scp=0035934365&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035934365&partnerID=8YFLogxK
U2 - 10.1016/S0921-5107(01)00598-0
DO - 10.1016/S0921-5107(01)00598-0
M3 - Article
AN - SCOPUS:0035934365
VL - 85
SP - 149
EP - 153
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 2-3
ER -