A Raman scattering study of self-assembled pure isotope Ge/Si(100) quantum dots

A. V. Kolobov, K. Morita, Kohei M Itoh, E. E. Haller

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The self-assembled pure isotope Ge/Si(100) quantum dots (QD) were studied using Raman scattering. It was shown that the intermixing in the QDs depends on the dot size, is stronger in smaller dots and the germanium rich area exists as a core of the dots. It was also shown that the amplitude of the Raman peak is not directly proportional to the number of the corresponding bonds in the sample.

Original languageEnglish
Pages (from-to)3855-3857
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number20
DOIs
Publication statusPublished - 2002 Nov 11

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germanium
isotopes
quantum dots
Raman spectra

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

A Raman scattering study of self-assembled pure isotope Ge/Si(100) quantum dots. / Kolobov, A. V.; Morita, K.; Itoh, Kohei M; Haller, E. E.

In: Applied Physics Letters, Vol. 81, No. 20, 11.11.2002, p. 3855-3857.

Research output: Contribution to journalArticle

Kolobov, A. V. ; Morita, K. ; Itoh, Kohei M ; Haller, E. E. / A Raman scattering study of self-assembled pure isotope Ge/Si(100) quantum dots. In: Applied Physics Letters. 2002 ; Vol. 81, No. 20. pp. 3855-3857.
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