A schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

J. Sailer, V. Lang, G. Abstreiter, G. Tsuchiya, K. M. Itoh, J. W. Ager, E. E. Haller, D. Kupidura, D. Harbusch, S. Ludwig, D. Bougeard

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Abstract

We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/(V s) at a sheet carrier density of 4.6 × 1011 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.

Original languageEnglish
Pages (from-to)61-63
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume3
Issue number2-3
DOIs
Publication statusPublished - 2009 Dec 9

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Sailer, J., Lang, V., Abstreiter, G., Tsuchiya, G., Itoh, K. M., Ager, J. W., Haller, E. E., Kupidura, D., Harbusch, D., Ludwig, S., & Bougeard, D. (2009). A schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure. Physica Status Solidi - Rapid Research Letters, 3(2-3), 61-63. https://doi.org/10.1002/pssr.200802275