Abstract
Cu-rich CuGaSe2 films grown on [001] oriented GaAs substrates by molecular beam epitaxy show a remarkable low temperature photoluminescence emission peaked at 1.620 eV. This emission can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. The ionization energies of these states are found to be 3.4 and 108 meV, respectively, via temperature dependent photoluminescence. The 108 meV state is attributed to a donor and the 3.4 meV state to an acceptor state observed.
| Original language | English |
|---|---|
| Pages (from-to) | 2794-2798 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 81 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1997 Mar 15 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Yamada, A., Fons, P., Niki, S., Shibata, H., Obara, A., Makita, Y., & Oyanagi, H. (1997). A shallow state in molecular beam epitaxial grown CuGaSe2 film detectable by 1.62 eV photoluminescence. Journal of Applied Physics, 81(6), 2794-2798. https://doi.org/10.1063/1.363936