A shallow state in molecular beam epitaxial grown CuGaSe2 film detectable by 1.62 eV photoluminescence

Akimasa Yamada, Paul Fons, Shigeru Niki, Hajime Shibata, Akira Obara, Yunosuke Makita, Hiroyuki Oyanagi

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Cu-rich CuGaSe2 films grown on [001] oriented GaAs substrates by molecular beam epitaxy show a remarkable low temperature photoluminescence emission peaked at 1.620 eV. This emission can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. The ionization energies of these states are found to be 3.4 and 108 meV, respectively, via temperature dependent photoluminescence. The 108 meV state is attributed to a donor and the 3.4 meV state to an acceptor state observed.

Original languageEnglish
Pages (from-to)2794-2798
Number of pages5
JournalJournal of Applied Physics
Volume81
Issue number6
DOIs
Publication statusPublished - 1997 Mar 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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