A shallow state in molecular beam epitaxial grown CuGaSe2 film detectable by 1.62 eV photoluminescence

Akimasa Yamada, Paul Fons, Shigeru Niki, Hajime Shibata, Akira Obara, Yunosuke Makita, Hiroyuki Oyanagi

Research output: Contribution to journalArticlepeer-review

32 Citations (Scopus)


Cu-rich CuGaSe2 films grown on [001] oriented GaAs substrates by molecular beam epitaxy show a remarkable low temperature photoluminescence emission peaked at 1.620 eV. This emission can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. The ionization energies of these states are found to be 3.4 and 108 meV, respectively, via temperature dependent photoluminescence. The 108 meV state is attributed to a donor and the 3.4 meV state to an acceptor state observed.

Original languageEnglish
Pages (from-to)2794-2798
Number of pages5
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 1997 Mar 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'A shallow state in molecular beam epitaxial grown CuGaSe<sub>2</sub> film detectable by 1.62 eV photoluminescence'. Together they form a unique fingerprint.

Cite this