A shallow state in molecular beam epitaxial grown CuGaSe2 film detectable by 1.62 eV photoluminescence

Akimasa Yamada; Paul Fons; Shigeru Niki; Hajime Shibata; Akira Obara; Yunosuke Makita; Hiroyuki Oyanagi

doi:10.1063/1.363936

A shallow state in molecular beam epitaxial grown CuGaSe₂ film detectable by 1.62 eV photoluminescence

Akimasa Yamada, Paul Fons, Shigeru Niki, Hajime Shibata, Akira Obara, Yunosuke Makita, Hiroyuki Oyanagi

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Cu-rich CuGaSe₂ films grown on [001] oriented GaAs substrates by molecular beam epitaxy show a remarkable low temperature photoluminescence emission peaked at 1.620 eV. This emission can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. The ionization energies of these states are found to be 3.4 and 108 meV, respectively, via temperature dependent photoluminescence. The 108 meV state is attributed to a donor and the 3.4 meV state to an acceptor state observed.

Original language	English
Pages (from-to)	2794-2798
Number of pages	5
Journal	Journal of Applied Physics
Volume	81
Issue number	6
DOIs	https://doi.org/10.1063/1.363936
Publication status	Published - 1997 Mar 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{a40024ef2d0345d4b5e94a3f415fe8e5,

title = "A shallow state in molecular beam epitaxial grown CuGaSe2 film detectable by 1.62 eV photoluminescence",

abstract = "Cu-rich CuGaSe2 films grown on [001] oriented GaAs substrates by molecular beam epitaxy show a remarkable low temperature photoluminescence emission peaked at 1.620 eV. This emission can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. The ionization energies of these states are found to be 3.4 and 108 meV, respectively, via temperature dependent photoluminescence. The 108 meV state is attributed to a donor and the 3.4 meV state to an acceptor state observed.",

author = "Akimasa Yamada and Paul Fons and Shigeru Niki and Hajime Shibata and Akira Obara and Yunosuke Makita and Hiroyuki Oyanagi",

year = "1997",

month = mar,

day = "15",

doi = "10.1063/1.363936",

language = "English",

volume = "81",

pages = "2794--2798",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - A shallow state in molecular beam epitaxial grown CuGaSe2 film detectable by 1.62 eV photoluminescence

AU - Yamada, Akimasa

AU - Fons, Paul

AU - Niki, Shigeru

AU - Shibata, Hajime

AU - Obara, Akira

AU - Makita, Yunosuke

AU - Oyanagi, Hiroyuki

PY - 1997/3/15

Y1 - 1997/3/15

N2 - Cu-rich CuGaSe2 films grown on [001] oriented GaAs substrates by molecular beam epitaxy show a remarkable low temperature photoluminescence emission peaked at 1.620 eV. This emission can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. The ionization energies of these states are found to be 3.4 and 108 meV, respectively, via temperature dependent photoluminescence. The 108 meV state is attributed to a donor and the 3.4 meV state to an acceptor state observed.

AB - Cu-rich CuGaSe2 films grown on [001] oriented GaAs substrates by molecular beam epitaxy show a remarkable low temperature photoluminescence emission peaked at 1.620 eV. This emission can be attributed to a free-to-bound recombination accompanying a donor-to-acceptor pair recombination. The ionization energies of these states are found to be 3.4 and 108 meV, respectively, via temperature dependent photoluminescence. The 108 meV state is attributed to a donor and the 3.4 meV state to an acceptor state observed.

UR - http://www.scopus.com/inward/record.url?scp=0000350424&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000350424&partnerID=8YFLogxK

U2 - 10.1063/1.363936

DO - 10.1063/1.363936

M3 - Article

AN - SCOPUS:0000350424

VL - 81

SP - 2794

EP - 2798

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6