A single-atom quantum memory in silicon

Solomon Freer, Stephanie Simmons, Arne Laucht, Juha T. Muhonen, Juan P. Dehollain, Rachpon Kalra, Fahd A. Mohiyaddin, Fay E. Hudson, Kohei M Itoh, Jeffrey C. McCallum, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a 'quantum memory' while idle. The 31P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically enriched 28Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity %, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.

Original languageEnglish
Article number015009
JournalQuantum Science and Technology
Volume2
Issue number1
DOIs
Publication statusPublished - 2017 Mar 1

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Keywords

  • phosphorusin silicon
  • quantum coherence
  • quantum memory
  • silicon quantum computing
  • single-atom devices
  • single-spin magnetic resonance
  • spin qubits

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)
  • Electrical and Electronic Engineering
  • Materials Science (miscellaneous)

Cite this

Freer, S., Simmons, S., Laucht, A., Muhonen, J. T., Dehollain, J. P., Kalra, R., Mohiyaddin, F. A., Hudson, F. E., Itoh, K. M., McCallum, J. C., Jamieson, D. N., Dzurak, A. S., & Morello, A. (2017). A single-atom quantum memory in silicon. Quantum Science and Technology, 2(1), [015009]. https://doi.org/10.1088/2058-9565/aa63a4