A single-atom quantum memory in silicon

Solomon Freer; Stephanie Simmons; Arne Laucht; Juha T. Muhonen; Juan P. Dehollain; Rachpon Kalra; Fahd A. Mohiyaddin; Fay E. Hudson; Kohei M. Itoh; Jeffrey C. McCallum; David N. Jamieson; Andrew S. Dzurak; Andrea Morello

doi:10.1088/2058-9565/aa63a4

A single-atom quantum memory in silicon

Solomon Freer, Stephanie Simmons, Arne Laucht, Juha T. Muhonen, Juan P. Dehollain, Rachpon Kalra, Fahd A. Mohiyaddin, Fay E. Hudson, Kohei M. Itoh, Jeffrey C. McCallum, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

President

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a 'quantum memory' while idle. The ³¹ P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the ³¹ P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically enriched ²⁸ Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity %, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.

Original language	English
Article number	015009
Journal	Quantum Science and Technology
Volume	2
Issue number	1
DOIs	https://doi.org/10.1088/2058-9565/aa63a4
Publication status	Published - 2017 Mar 1

Keywords

phosphorusin silicon
quantum coherence
quantum memory
silicon quantum computing
single-atom devices
single-spin magnetic resonance
spin qubits

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Materials Science (miscellaneous)
Physics and Astronomy (miscellaneous)
Electrical and Electronic Engineering

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10.1088/2058-9565/aa63a4

Cite this

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title = "A single-atom quantum memory in silicon",

abstract = " Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a 'quantum memory' while idle. The 31 P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31 P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically enriched 28 Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity %, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses. ",

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note = "Funding Information: This research was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (project number CE11E0001027), the US Army Research Office (W911NF-13-1-0024) and the Commonwealth Bank of Australia. We acknowledge support from the Australian National Fabrication Facility, and from the laboratory of Prof Robert Elliman at the Australian National University for the ion implantation facilities. The work at Keio has been supported in part by KAKENHI (S) No. 26220602, Core-to-Core Program by JSPS, and Spintronics Research Network of Japan. Publisher Copyright: {\textcopyright} 2017 IOP Publishing Ltd.",

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AU - Freer, Solomon

AU - Simmons, Stephanie

AU - Laucht, Arne

AU - Muhonen, Juha T.

AU - Dehollain, Juan P.

AU - Kalra, Rachpon

AU - Mohiyaddin, Fahd A.

AU - Hudson, Fay E.

AU - Itoh, Kohei M.

AU - McCallum, Jeffrey C.

AU - Jamieson, David N.

AU - Dzurak, Andrew S.

AU - Morello, Andrea

N1 - Funding Information: This research was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (project number CE11E0001027), the US Army Research Office (W911NF-13-1-0024) and the Commonwealth Bank of Australia. We acknowledge support from the Australian National Fabrication Facility, and from the laboratory of Prof Robert Elliman at the Australian National University for the ion implantation facilities. The work at Keio has been supported in part by KAKENHI (S) No. 26220602, Core-to-Core Program by JSPS, and Spintronics Research Network of Japan. Publisher Copyright: © 2017 IOP Publishing Ltd.

PY - 2017/3/1

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N2 - Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a 'quantum memory' while idle. The 31 P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31 P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically enriched 28 Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity %, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.

AB - Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a 'quantum memory' while idle. The 31 P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31 P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically enriched 28 Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity %, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.

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A single-atom quantum memory in silicon

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