A study of the crystalline growth of highly boron-doped CVD diamond: Preparation of graded-morphology diamond thin films

Yasuaki Einaga, Gyu Sik Kim, Soo Gil Park, Akira Fujishima

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

An investigation was made of graded-morphology diamond thin films deposited on Si substrates by use of the microwave plasma chemical vapor deposition (CVD) technique. The preparation of graded diamond thin films not only offers new perspectives into functional materials, but it also gives clues to the growth mechanism of CVD diamond. Although it is clear that the substrate temperature and the deposition time affect the grain size in particular, the difference depending on the boron concentration in the growing process was studied in the present work. As a result, in highly boron-doped (104 ppm) diamond films, the Raman peak which was ascribed to the boron-doping was not observed at the very initial growth stage. However, the crystal growth process was almost irrelevant for the boron-doping quantity. Furthermore, we showed the morphology dependence of electrochemical properties as one example of the excellent functions of the graded-morphology highly boron-doped diamond film.

Original languageEnglish
Pages (from-to)306-311
Number of pages6
JournalDiamond and Related Materials
Volume10
Issue number3-7
DOIs
Publication statusPublished - 2001 Mar 1
Externally publishedYes

Keywords

  • Crystalline growth
  • Graded-morphology
  • Highly boron-doped diamond film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

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