A study on high temperature CMOS circuits for sensor applications with SDB-SOI wafer

Yoshinori Matsumoto, Yasuo Kitayama, Akihisa Kawamura, Makoto Ishida

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

High temperature CMOS circuits for sensor applications have been fabricated using Silicon-Direct-Bonding (SDB) SOI wafers. A novel SOI-MOSFET structure was fabricated on silicon film of 800nm in thickness above a buried oxide layer of lm in thickness. The MOSFET was designed in order to remove Kink-effect and parasitic bipolar transistor effect, and the fabrication process was optimized by process simulator(SUPREM III). The signal conditioning circuits (Operational amplifier and C-F converter) for sensor applications were designed and fabricated with the MOSFET. These MOSFET and signal conditioning circuits were operated up to 300°C. The temperature dependence of the MOSFET and the characteristic of the circuits were evaluated from room temperature to 300°C.

Original languageEnglish
Pages (from-to)377-383
Number of pages7
JournalIEEJ Transactions on Sensors and Micromachines
Volume117
Issue number7
DOIs
Publication statusPublished - 1997
Externally publishedYes

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ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering

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