High temperature CMOS circuits for sensor applications have been fabricated using Silicon-Direct-Bonding (SDB) SOI wafers. A novel SOI-MOSFET structure was fabricated on silicon film of 800nm in thickness above a buried oxide layer of lm in thickness. The MOSFET was designed in order to remove Kink-effect and parasitic bipolar transistor effect, and the fabrication process was optimized by process simulator(SUPREM III). The signal conditioning circuits (Operational amplifier and C-F converter) for sensor applications were designed and fabricated with the MOSFET. These MOSFET and signal conditioning circuits were operated up to 300°C. The temperature dependence of the MOSFET and the characteristic of the circuits were evaluated from room temperature to 300°C.
|Number of pages||7|
|Journal||ieej transactions on sensors and micromachines|
|Publication status||Published - 1997|
ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering