A trial for micro-scale evaluation of adhesion strength around Cu metallization systems

Shoji Kamiya; Hitoshi Arakawa; Hiroshi Shimomura; Masaki Omiya

doi:10.1557/proc-0990-b10-04

A trial for micro-scale evaluation of adhesion strength around Cu metallization systems

Shoji Kamiya, Hitoshi Arakawa, Hiroshi Shimomura, Masaki Omiya

Department of Mechanical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Adhesion strength of the interface between Cu film and SiCN cap layer for IC metallization system was evaluated by a technique developed by the authors. In this technique, microscopic specimens with the in-plane dimension less than 10 μm were fabricated by focused ion beam system and loaded directly by a sharp diamond stylus with submicron tip radius. By comparing the crack extension behavior with the three-dimensional numerical simulation, the interface adhesion energy was evaluated to be 5 J/m². The same interface was subjected also to the four-point bending experiment, which is widely applied to interface adhesion measurement. The evaluation results by the two techniques agreed reasonably well with each other.

Original language	English
Title of host publication	Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics
Publisher	Materials Research Society
Pages	213-218
Number of pages	6
ISBN (Print)	9781558999503
DOIs	https://doi.org/10.1557/proc-0990-b10-04
Publication status	Published - 2007 Jan 1
Event	2007 MRS Spring Meeting - San Francisco, CA, United States Duration: 2007 Apr 10 → 2007 Apr 12

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	990
ISSN (Print)	0272-9172

Other

Other	2007 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	07/4/10 → 07/4/12

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-0990-b10-04

Cite this

Kamiya, S., Arakawa, H., Shimomura, H., & Omiya, M. (2007). A trial for micro-scale evaluation of adhesion strength around Cu metallization systems. In Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics (pp. 213-218). (Materials Research Society Symposium Proceedings; Vol. 990). Materials Research Society. https://doi.org/10.1557/proc-0990-b10-04

A trial for micro-scale evaluation of adhesion strength around Cu metallization systems. / Kamiya, Shoji; Arakawa, Hitoshi; Shimomura, Hiroshi et al.

Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics. Materials Research Society, 2007. p. 213-218 (Materials Research Society Symposium Proceedings; Vol. 990).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kamiya, S, Arakawa, H, Shimomura, H & Omiya, M 2007, A trial for micro-scale evaluation of adhesion strength around Cu metallization systems. in Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics. Materials Research Society Symposium Proceedings, vol. 990, Materials Research Society, pp. 213-218, 2007 MRS Spring Meeting, San Francisco, CA, United States, 07/4/10. https://doi.org/10.1557/proc-0990-b10-04

Kamiya S, Arakawa H, Shimomura H, Omiya M. A trial for micro-scale evaluation of adhesion strength around Cu metallization systems. In Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics. Materials Research Society. 2007. p. 213-218. (Materials Research Society Symposium Proceedings). doi: 10.1557/proc-0990-b10-04

@inproceedings{b2cd31704fb94b65a6e8f73190f60ae9,

title = "A trial for micro-scale evaluation of adhesion strength around Cu metallization systems",

abstract = "Adhesion strength of the interface between Cu film and SiCN cap layer for IC metallization system was evaluated by a technique developed by the authors. In this technique, microscopic specimens with the in-plane dimension less than 10 μm were fabricated by focused ion beam system and loaded directly by a sharp diamond stylus with submicron tip radius. By comparing the crack extension behavior with the three-dimensional numerical simulation, the interface adhesion energy was evaluated to be 5 J/m2. The same interface was subjected also to the four-point bending experiment, which is widely applied to interface adhesion measurement. The evaluation results by the two techniques agreed reasonably well with each other.",

author = "Shoji Kamiya and Hitoshi Arakawa and Hiroshi Shimomura and Masaki Omiya",

year = "2007",

month = jan,

day = "1",

doi = "10.1557/proc-0990-b10-04",

language = "English",

isbn = "9781558999503",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "213--218",

booktitle = "Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics",

note = "2007 MRS Spring Meeting ; Conference date: 10-04-2007 Through 12-04-2007",

}

TY - GEN

T1 - A trial for micro-scale evaluation of adhesion strength around Cu metallization systems

AU - Kamiya, Shoji

AU - Arakawa, Hitoshi

AU - Shimomura, Hiroshi

AU - Omiya, Masaki

PY - 2007/1/1

Y1 - 2007/1/1

N2 - Adhesion strength of the interface between Cu film and SiCN cap layer for IC metallization system was evaluated by a technique developed by the authors. In this technique, microscopic specimens with the in-plane dimension less than 10 μm were fabricated by focused ion beam system and loaded directly by a sharp diamond stylus with submicron tip radius. By comparing the crack extension behavior with the three-dimensional numerical simulation, the interface adhesion energy was evaluated to be 5 J/m2. The same interface was subjected also to the four-point bending experiment, which is widely applied to interface adhesion measurement. The evaluation results by the two techniques agreed reasonably well with each other.

AB - Adhesion strength of the interface between Cu film and SiCN cap layer for IC metallization system was evaluated by a technique developed by the authors. In this technique, microscopic specimens with the in-plane dimension less than 10 μm were fabricated by focused ion beam system and loaded directly by a sharp diamond stylus with submicron tip radius. By comparing the crack extension behavior with the three-dimensional numerical simulation, the interface adhesion energy was evaluated to be 5 J/m2. The same interface was subjected also to the four-point bending experiment, which is widely applied to interface adhesion measurement. The evaluation results by the two techniques agreed reasonably well with each other.

UR - http://www.scopus.com/inward/record.url?scp=41549112584&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41549112584&partnerID=8YFLogxK

U2 - 10.1557/proc-0990-b10-04

DO - 10.1557/proc-0990-b10-04

M3 - Conference contribution

AN - SCOPUS:41549112584

SN - 9781558999503

T3 - Materials Research Society Symposium Proceedings

SP - 213

EP - 218

BT - Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics

PB - Materials Research Society

T2 - 2007 MRS Spring Meeting

Y2 - 10 April 2007 through 12 April 2007

ER -

A trial for micro-scale evaluation of adhesion strength around Cu metallization systems

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this