A two-step process for growth of highly oriented Sb2Te3 using sputtering

Yuta Saito; Paul Fons; Leonid Bolotov; Noriyuki Miyata; Alexander V. Kolobov; Junji Tominaga

doi:10.1063/1.4948536

A two-step process for growth of highly oriented Sb₂Te₃ using sputtering

Yuta Saito, Paul Fons, Leonid Bolotov, Noriyuki Miyata, Alexander V. Kolobov, Junji Tominaga

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

A two-step growth method is proposed for the fabrication of highly-oriented Sb₂Te₃ and related superlattice films using sputtering. We report that the quality and grain size of Sb₂Te₃ as well as GeTe/Sb₂Te₃ superlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K Sb₂Te₃ seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.

Original language	English
Article number	045220
Journal	AIP Advances
Volume	6
Issue number	4
DOIs	https://doi.org/10.1063/1.4948536
Publication status	Published - 2016 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.4948536

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@article{ccfbb9349f7441d6802a5fd31351f708,

title = "A two-step process for growth of highly oriented Sb2Te3 using sputtering",

abstract = "A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K Sb2Te3 seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.",

author = "Yuta Saito and Paul Fons and Leonid Bolotov and Noriyuki Miyata and Kolobov, {Alexander V.} and Junji Tominaga",

note = "Funding Information: This research was supported by CREST, JST. A part of this work was conducted at the AIST Nano-Processing Facility, supported by Nanotechnology Platform Program of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = apr,

day = "1",

doi = "10.1063/1.4948536",

language = "English",

volume = "6",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - A two-step process for growth of highly oriented Sb2Te3 using sputtering

AU - Saito, Yuta

AU - Fons, Paul

AU - Bolotov, Leonid

AU - Miyata, Noriyuki

AU - Kolobov, Alexander V.

AU - Tominaga, Junji

N1 - Funding Information: This research was supported by CREST, JST. A part of this work was conducted at the AIST Nano-Processing Facility, supported by Nanotechnology Platform Program of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Publisher Copyright: © 2016 Author(s).

PY - 2016/4/1

Y1 - 2016/4/1

N2 - A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K Sb2Te3 seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.

AB - A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K Sb2Te3 seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.

UR - http://www.scopus.com/inward/record.url?scp=84969724173&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84969724173&partnerID=8YFLogxK

U2 - 10.1063/1.4948536

DO - 10.1063/1.4948536

M3 - Article

AN - SCOPUS:84969724173

SN - 2158-3226

VL - 6

JO - AIP Advances

JF - AIP Advances

IS - 4

M1 - 045220

ER -

A two-step process for growth of highly oriented Sb₂Te₃ using sputtering

Abstract

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