A XANES study of Cu valency in Cu-doped epitaxial ZnO

P. Fons, K. Nakahara, A. Yamada, K. Iwata, K. Matsubara, H. Takasu, S. Niki

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Near-edge X-ray absorption (XANES) at the Cu K-edge was employed to study the valency of Cu (a potential p-dopant) in Cu-doped ZnO grown by molecular beam epitaxy. For a similar chemical environment, a shift in the onset of absorption can be interpreted as being due to a change in effective valency. We have studied this shift for both as-grown and argon ambient annealed (1000 °C,30 min) Cu-doped ZnO samples. The valency shift was measured against ab-initio standards calculated using feff8 as well as the standard samples Cu2O (+1 valence) and CuO (+2 valence). It was found for the flux region explored here that as-incorporated Cu assumes an effective valence of approximately +1 which increases towards +2 upon a 1000 °C argon ambient anneal. X-ray diffraction also shows the presence of both metallic Cu and Cu2O depending upon growth and annealing conditions.

Original languageEnglish
Pages (from-to)849-852
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume229
Issue number2
DOIs
Publication statusPublished - 2002 Aug 14
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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