Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon: The influence of SiO2 films

Miki Naganawa, Yoko Kawamura, Yasuo Shimizu, Masashi Uematsu, Kohei M Itoh, Hiroyuki Ito, Mitsutoshi Nakamura, Hideaki Ishikawa, Yuzuru Ohji

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Abstract

Accurate determination of the intrinsic diffusivities of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) is reported. We show that the differences in the B, P, and As diffusivities reported in the previous works arise from whether SiO2 films existed on the Si sample surfaces. Impurity diffusion near the Si surface without SiO2 is affected by oxidation of Si even in the nominally inert atmosphere, which has unavoidable residual oxygen background due to the open furnace. On the other hand, a surface SiO2 film of ∼20nm thickness prepared before the diffusion annealing is sufficient to block further oxidation of Si, i.e., truly intrinsic diffusivities of impurities have been obtained from samples having surface oxide layers.

Original languageEnglish
Pages (from-to)6205-6207
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume47
Issue number8 PART 1
DOIs
Publication statusPublished - 2008 Aug 8

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Keywords

  • Arsenic
  • Boron
  • Diffusion
  • Phosphorus
  • Secondary ion mass spectrometry
  • Silicon
  • SiO films

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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