Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon: The influence of SiO2 films

Miki Naganawa; Yoko Kawamura; Yasuo Shimizu; Masashi Uematsu; Kohei M. Itoh; Hiroyuki Ito; Mitsutoshi Nakamura; Hideaki Ishikawa; Yuzuru Ohji

doi:10.1143/JJAP.47.6205

Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon: The influence of SiO₂ films

Miki Naganawa, Yoko Kawamura, Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Hiroyuki Ito, Mitsutoshi Nakamura, Hideaki Ishikawa, Yuzuru Ohji

President

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Accurate determination of the intrinsic diffusivities of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) is reported. We show that the differences in the B, P, and As diffusivities reported in the previous works arise from whether SiO₂ films existed on the Si sample surfaces. Impurity diffusion near the Si surface without SiO₂ is affected by oxidation of Si even in the nominally inert atmosphere, which has unavoidable residual oxygen background due to the open furnace. On the other hand, a surface SiO₂ film of ∼20nm thickness prepared before the diffusion annealing is sufficient to block further oxidation of Si, i.e., truly intrinsic diffusivities of impurities have been obtained from samples having surface oxide layers.

Original language	English
Pages (from-to)	6205-6207
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	47
Issue number	8 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.6205
Publication status	Published - 2008 Aug 8

Keywords

Arsenic
Boron
Diffusion
Phosphorus
Secondary ion mass spectrometry
SiO films
Silicon

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.47.6205

Cite this

Naganawa, M., Kawamura, Y., Shimizu, Y., Uematsu, M., Itoh, K. M., Ito, H., Nakamura, M., Ishikawa, H., & Ohji, Y. (2008). Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon: The influence of SiO₂ films. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 47(8 PART 1), 6205-6207. https://doi.org/10.1143/JJAP.47.6205

Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon : The influence of SiO₂ films. / Naganawa, Miki; Kawamura, Yoko; Shimizu, Yasuo et al.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 47, No. 8 PART 1, 08.08.2008, p. 6205-6207.

Research output: Contribution to journal › Article › peer-review

Naganawa, M, Kawamura, Y, Shimizu, Y, Uematsu, M, Itoh, KM, Ito, H, Nakamura, M, Ishikawa, H & Ohji, Y 2008, 'Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon: The influence of SiO₂ films', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 47, no. 8 PART 1, pp. 6205-6207. https://doi.org/10.1143/JJAP.47.6205

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abstract = "Accurate determination of the intrinsic diffusivities of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) is reported. We show that the differences in the B, P, and As diffusivities reported in the previous works arise from whether SiO2 films existed on the Si sample surfaces. Impurity diffusion near the Si surface without SiO2 is affected by oxidation of Si even in the nominally inert atmosphere, which has unavoidable residual oxygen background due to the open furnace. On the other hand, a surface SiO2 film of ∼20nm thickness prepared before the diffusion annealing is sufficient to block further oxidation of Si, i.e., truly intrinsic diffusivities of impurities have been obtained from samples having surface oxide layers.",

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AU - Itoh, Kohei M.

AU - Ito, Hiroyuki

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