Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon: The influence of SiO2 films

Miki Naganawa, Yoko Kawamura, Yasuo Shimizu, Masashi Uematsu, Kohei M Itoh, Hiroyuki Ito, Mitsutoshi Nakamura, Hideaki Ishikawa, Yuzuru Ohji

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Accurate determination of the intrinsic diffusivities of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) is reported. We show that the differences in the B, P, and As diffusivities reported in the previous works arise from whether SiO2 films existed on the Si sample surfaces. Impurity diffusion near the Si surface without SiO2 is affected by oxidation of Si even in the nominally inert atmosphere, which has unavoidable residual oxygen background due to the open furnace. On the other hand, a surface SiO2 film of ∼20nm thickness prepared before the diffusion annealing is sufficient to block further oxidation of Si, i.e., truly intrinsic diffusivities of impurities have been obtained from samples having surface oxide layers.

Original languageEnglish
Pages (from-to)6205-6207
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume47
Issue number8 PART 1
DOIs
Publication statusPublished - 2008 Aug 8

Fingerprint

Arsenic
arsenic
diffusivity
Boron
phosphorus
Phosphorus
boron
Silicon
silicon
Impurities
impurities
Oxidation
oxidation
inert atmosphere
furnaces
Furnaces
Annealing
annealing
Oxides
Oxygen

Keywords

  • Arsenic
  • Boron
  • Diffusion
  • Phosphorus
  • Secondary ion mass spectrometry
  • Silicon
  • SiO films

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon : The influence of SiO2 films. / Naganawa, Miki; Kawamura, Yoko; Shimizu, Yasuo; Uematsu, Masashi; Itoh, Kohei M; Ito, Hiroyuki; Nakamura, Mitsutoshi; Ishikawa, Hideaki; Ohji, Yuzuru.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 47, No. 8 PART 1, 08.08.2008, p. 6205-6207.

Research output: Contribution to journalArticle

Naganawa, Miki ; Kawamura, Yoko ; Shimizu, Yasuo ; Uematsu, Masashi ; Itoh, Kohei M ; Ito, Hiroyuki ; Nakamura, Mitsutoshi ; Ishikawa, Hideaki ; Ohji, Yuzuru. / Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon : The influence of SiO2 films. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2008 ; Vol. 47, No. 8 PART 1. pp. 6205-6207.
@article{6a1d0ef3f7a64d219b62ed17d424a2ff,
title = "Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon: The influence of SiO2 films",
abstract = "Accurate determination of the intrinsic diffusivities of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) is reported. We show that the differences in the B, P, and As diffusivities reported in the previous works arise from whether SiO2 films existed on the Si sample surfaces. Impurity diffusion near the Si surface without SiO2 is affected by oxidation of Si even in the nominally inert atmosphere, which has unavoidable residual oxygen background due to the open furnace. On the other hand, a surface SiO2 film of ∼20nm thickness prepared before the diffusion annealing is sufficient to block further oxidation of Si, i.e., truly intrinsic diffusivities of impurities have been obtained from samples having surface oxide layers.",
keywords = "Arsenic, Boron, Diffusion, Phosphorus, Secondary ion mass spectrometry, Silicon, SiO films",
author = "Miki Naganawa and Yoko Kawamura and Yasuo Shimizu and Masashi Uematsu and Itoh, {Kohei M} and Hiroyuki Ito and Mitsutoshi Nakamura and Hideaki Ishikawa and Yuzuru Ohji",
year = "2008",
month = "8",
day = "8",
doi = "10.1143/JJAP.47.6205",
language = "English",
volume = "47",
pages = "6205--6207",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 PART 1",

}

TY - JOUR

T1 - Accurate determination of the intrinsic diffusivities of boron, phosphorus, and arsenic in silicon

T2 - The influence of SiO2 films

AU - Naganawa, Miki

AU - Kawamura, Yoko

AU - Shimizu, Yasuo

AU - Uematsu, Masashi

AU - Itoh, Kohei M

AU - Ito, Hiroyuki

AU - Nakamura, Mitsutoshi

AU - Ishikawa, Hideaki

AU - Ohji, Yuzuru

PY - 2008/8/8

Y1 - 2008/8/8

N2 - Accurate determination of the intrinsic diffusivities of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) is reported. We show that the differences in the B, P, and As diffusivities reported in the previous works arise from whether SiO2 films existed on the Si sample surfaces. Impurity diffusion near the Si surface without SiO2 is affected by oxidation of Si even in the nominally inert atmosphere, which has unavoidable residual oxygen background due to the open furnace. On the other hand, a surface SiO2 film of ∼20nm thickness prepared before the diffusion annealing is sufficient to block further oxidation of Si, i.e., truly intrinsic diffusivities of impurities have been obtained from samples having surface oxide layers.

AB - Accurate determination of the intrinsic diffusivities of boron (B), phosphorus (P), and arsenic (As) in silicon (Si) is reported. We show that the differences in the B, P, and As diffusivities reported in the previous works arise from whether SiO2 films existed on the Si sample surfaces. Impurity diffusion near the Si surface without SiO2 is affected by oxidation of Si even in the nominally inert atmosphere, which has unavoidable residual oxygen background due to the open furnace. On the other hand, a surface SiO2 film of ∼20nm thickness prepared before the diffusion annealing is sufficient to block further oxidation of Si, i.e., truly intrinsic diffusivities of impurities have been obtained from samples having surface oxide layers.

KW - Arsenic

KW - Boron

KW - Diffusion

KW - Phosphorus

KW - Secondary ion mass spectrometry

KW - Silicon

KW - SiO films

UR - http://www.scopus.com/inward/record.url?scp=55149107431&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55149107431&partnerID=8YFLogxK

U2 - 10.1143/JJAP.47.6205

DO - 10.1143/JJAP.47.6205

M3 - Article

AN - SCOPUS:55149107431

VL - 47

SP - 6205

EP - 6207

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 PART 1

ER -