Advanced Industrial Tunnel Oxide Passivated Contact Solar Cell by the Rear-Side Local Carrier-Selective Contact

Takaya Sugiura; Satoru Matsumoto; Nobuhiko Nakano

doi:10.1109/TED.2022.3159272

Advanced Industrial Tunnel Oxide Passivated Contact Solar Cell by the Rear-Side Local Carrier-Selective Contact

Takaya Sugiura, Satoru Matsumoto, Nobuhiko Nakano

Department of Electronics and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, we propose an advanced tunnel oxide passivated contact (TOPCon) solar cell structure for bifacial usage. The proposed structure, named advanced industrial TOPCon (Ai-TOPCon), adopts rear-side local carrier-selective contacts to avoid rear-side light-absorption loss. Ai-TOPCon features larger rear-side light currents and improves the power density by approximately 0.28 mW/cm2 for bifacial usage in a 20% albedo scenario. Several types of Ai-TOPCon and industrial TOPCon (i-TOPCon) are evaluated, and the optimization of the structure resulted in a power density of 28.73 mW/cm2. Loss analysis revealed that the reduced Auger recombination volume was the main factor contributing to the improvement of cell performance, and the light-absorption problem was solved by reducing the rear-side heavy-doped region.

Original language	English
Pages (from-to)	2481-2487
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	69
Issue number	5
DOIs	https://doi.org/10.1109/TED.2022.3159272
Publication status	Published - 2022 May 1

Keywords

Carrier tunnel
Device simulation
Solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2022.3159272

Cite this

@article{9080ef71126343779536aad37af07ab9,

title = "Advanced Industrial Tunnel Oxide Passivated Contact Solar Cell by the Rear-Side Local Carrier-Selective Contact",

abstract = "In this study, we propose an advanced tunnel oxide passivated contact (TOPCon) solar cell structure for bifacial usage. The proposed structure, named advanced industrial TOPCon (Ai-TOPCon), adopts rear-side local carrier-selective contacts to avoid rear-side light-absorption loss. Ai-TOPCon features larger rear-side light currents and improves the power density by approximately 0.28 mW/cm2 for bifacial usage in a 20% albedo scenario. Several types of Ai-TOPCon and industrial TOPCon (i-TOPCon) are evaluated, and the optimization of the structure resulted in a power density of 28.73 mW/cm2. Loss analysis revealed that the reduced Auger recombination volume was the main factor contributing to the improvement of cell performance, and the light-absorption problem was solved by reducing the rear-side heavy-doped region.",

keywords = "Carrier tunnel, Device simulation, Solar cell",

author = "Takaya Sugiura and Satoru Matsumoto and Nobuhiko Nakano",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2022",

month = may,

day = "1",

doi = "10.1109/TED.2022.3159272",

language = "English",

volume = "69",

pages = "2481--2487",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Advanced Industrial Tunnel Oxide Passivated Contact Solar Cell by the Rear-Side Local Carrier-Selective Contact

AU - Sugiura, Takaya

AU - Matsumoto, Satoru

AU - Nakano, Nobuhiko

PY - 2022/5/1

Y1 - 2022/5/1

N2 - In this study, we propose an advanced tunnel oxide passivated contact (TOPCon) solar cell structure for bifacial usage. The proposed structure, named advanced industrial TOPCon (Ai-TOPCon), adopts rear-side local carrier-selective contacts to avoid rear-side light-absorption loss. Ai-TOPCon features larger rear-side light currents and improves the power density by approximately 0.28 mW/cm2 for bifacial usage in a 20% albedo scenario. Several types of Ai-TOPCon and industrial TOPCon (i-TOPCon) are evaluated, and the optimization of the structure resulted in a power density of 28.73 mW/cm2. Loss analysis revealed that the reduced Auger recombination volume was the main factor contributing to the improvement of cell performance, and the light-absorption problem was solved by reducing the rear-side heavy-doped region.

AB - In this study, we propose an advanced tunnel oxide passivated contact (TOPCon) solar cell structure for bifacial usage. The proposed structure, named advanced industrial TOPCon (Ai-TOPCon), adopts rear-side local carrier-selective contacts to avoid rear-side light-absorption loss. Ai-TOPCon features larger rear-side light currents and improves the power density by approximately 0.28 mW/cm2 for bifacial usage in a 20% albedo scenario. Several types of Ai-TOPCon and industrial TOPCon (i-TOPCon) are evaluated, and the optimization of the structure resulted in a power density of 28.73 mW/cm2. Loss analysis revealed that the reduced Auger recombination volume was the main factor contributing to the improvement of cell performance, and the light-absorption problem was solved by reducing the rear-side heavy-doped region.

KW - Carrier tunnel

KW - Device simulation

KW - Solar cell

UR - http://www.scopus.com/inward/record.url?scp=85127464758&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85127464758&partnerID=8YFLogxK

U2 - 10.1109/TED.2022.3159272

DO - 10.1109/TED.2022.3159272

M3 - Article

AN - SCOPUS:85127464758

SN - 0018-9383

VL - 69

SP - 2481

EP - 2487

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Advanced Industrial Tunnel Oxide Passivated Contact Solar Cell by the Rear-Side Local Carrier-Selective Contact

Abstract

Keywords

ASJC Scopus subject areas

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