Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution

Naoto Ito, Taichi Misawa, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

As a means of investigating both the electrical and thermal properties of nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method that used two new procedures: (i) a local temperature determination using the simulated phonon spatial distribution and feedback to update the electron-phonon scattering rates and (ii) a new algorithm which calculates long-time phonon transport by introducing different time increments for the electron and phonon transport. In this paper, to improve the quantitative accuracy and self-consistency of the simulation, we investigate an advanced Monte Carlo method considering (i) spatially dependent electron-phonon scattering rates that are calculated directly using a simulated phonon distribution (not the local temperature) taking into account (ii) the energy dependence of the phonon group velocity and phonon-phonon scattering rate and (iii) positive polarization charges due to piezoelectricity at the AlGaN/GaN interface. Using this advanced Monte Carlo method, we succeeded in simulating the current-voltage characteristics and thermal resistance of GaN HEMTs (High Electron Mobility Transistors), with which a quantitative evaluation could be made using actual devices. We also examined the convergence of this self-consistent Monte Carlo model.

Original languageEnglish
Title of host publication2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages349-352
Number of pages4
ISBN (Electronic)9781509008179
DOIs
Publication statusPublished - 2016 Oct 20
Event2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 - Nuremberg, Germany
Duration: 2016 Sep 62016 Sep 8

Other

Other2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
CountryGermany
CityNuremberg
Period16/9/616/9/8

Fingerprint

Gallium nitride
Phonon scattering
Nitrides
Thermal Properties
Electrical Properties
High electron mobility transistors
Phonon
Electric properties
Electron scattering
Thermodynamic properties
Monte Carlo Simulation
Electron
Monte Carlo methods
Electron devices
Piezoelectricity
Current voltage characteristics
Heat resistance
Monte Carlo method
Spatial distribution
Interfaces (computer)

Keywords

  • High Electron Mobility Transistor
  • Monte Carlo methods
  • Phonons
  • Thermal management of electronics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

Cite this

Ito, N., Misawa, T., & Awano, Y. (2016). Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution. In 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 (pp. 349-352). [7605218] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2016.7605218

Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution. / Ito, Naoto; Misawa, Taichi; Awano, Yuji.

2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 349-352 7605218.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ito, N, Misawa, T & Awano, Y 2016, Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution. in 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016., 7605218, Institute of Electrical and Electronics Engineers Inc., pp. 349-352, 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016, Nuremberg, Germany, 16/9/6. https://doi.org/10.1109/SISPAD.2016.7605218
Ito N, Misawa T, Awano Y. Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution. In 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 349-352. 7605218 https://doi.org/10.1109/SISPAD.2016.7605218
Ito, Naoto ; Misawa, Taichi ; Awano, Yuji. / Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution. 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 349-352
@inproceedings{9c6aa4f96ac241b5a927e21438df4528,
title = "Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution",
abstract = "As a means of investigating both the electrical and thermal properties of nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method that used two new procedures: (i) a local temperature determination using the simulated phonon spatial distribution and feedback to update the electron-phonon scattering rates and (ii) a new algorithm which calculates long-time phonon transport by introducing different time increments for the electron and phonon transport. In this paper, to improve the quantitative accuracy and self-consistency of the simulation, we investigate an advanced Monte Carlo method considering (i) spatially dependent electron-phonon scattering rates that are calculated directly using a simulated phonon distribution (not the local temperature) taking into account (ii) the energy dependence of the phonon group velocity and phonon-phonon scattering rate and (iii) positive polarization charges due to piezoelectricity at the AlGaN/GaN interface. Using this advanced Monte Carlo method, we succeeded in simulating the current-voltage characteristics and thermal resistance of GaN HEMTs (High Electron Mobility Transistors), with which a quantitative evaluation could be made using actual devices. We also examined the convergence of this self-consistent Monte Carlo model.",
keywords = "High Electron Mobility Transistor, Monte Carlo methods, Phonons, Thermal management of electronics",
author = "Naoto Ito and Taichi Misawa and Yuji Awano",
year = "2016",
month = "10",
day = "20",
doi = "10.1109/SISPAD.2016.7605218",
language = "English",
pages = "349--352",
booktitle = "2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution

AU - Ito, Naoto

AU - Misawa, Taichi

AU - Awano, Yuji

PY - 2016/10/20

Y1 - 2016/10/20

N2 - As a means of investigating both the electrical and thermal properties of nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method that used two new procedures: (i) a local temperature determination using the simulated phonon spatial distribution and feedback to update the electron-phonon scattering rates and (ii) a new algorithm which calculates long-time phonon transport by introducing different time increments for the electron and phonon transport. In this paper, to improve the quantitative accuracy and self-consistency of the simulation, we investigate an advanced Monte Carlo method considering (i) spatially dependent electron-phonon scattering rates that are calculated directly using a simulated phonon distribution (not the local temperature) taking into account (ii) the energy dependence of the phonon group velocity and phonon-phonon scattering rate and (iii) positive polarization charges due to piezoelectricity at the AlGaN/GaN interface. Using this advanced Monte Carlo method, we succeeded in simulating the current-voltage characteristics and thermal resistance of GaN HEMTs (High Electron Mobility Transistors), with which a quantitative evaluation could be made using actual devices. We also examined the convergence of this self-consistent Monte Carlo model.

AB - As a means of investigating both the electrical and thermal properties of nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method that used two new procedures: (i) a local temperature determination using the simulated phonon spatial distribution and feedback to update the electron-phonon scattering rates and (ii) a new algorithm which calculates long-time phonon transport by introducing different time increments for the electron and phonon transport. In this paper, to improve the quantitative accuracy and self-consistency of the simulation, we investigate an advanced Monte Carlo method considering (i) spatially dependent electron-phonon scattering rates that are calculated directly using a simulated phonon distribution (not the local temperature) taking into account (ii) the energy dependence of the phonon group velocity and phonon-phonon scattering rate and (iii) positive polarization charges due to piezoelectricity at the AlGaN/GaN interface. Using this advanced Monte Carlo method, we succeeded in simulating the current-voltage characteristics and thermal resistance of GaN HEMTs (High Electron Mobility Transistors), with which a quantitative evaluation could be made using actual devices. We also examined the convergence of this self-consistent Monte Carlo model.

KW - High Electron Mobility Transistor

KW - Monte Carlo methods

KW - Phonons

KW - Thermal management of electronics

UR - http://www.scopus.com/inward/record.url?scp=85015638257&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85015638257&partnerID=8YFLogxK

U2 - 10.1109/SISPAD.2016.7605218

DO - 10.1109/SISPAD.2016.7605218

M3 - Conference contribution

SP - 349

EP - 352

BT - 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -