Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution

Naoto Ito, Taichi Misawa, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

As a means of investigating both the electrical and thermal properties of nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method that used two new procedures: (i) a local temperature determination using the simulated phonon spatial distribution and feedback to update the electron-phonon scattering rates and (ii) a new algorithm which calculates long-time phonon transport by introducing different time increments for the electron and phonon transport. In this paper, to improve the quantitative accuracy and self-consistency of the simulation, we investigate an advanced Monte Carlo method considering (i) spatially dependent electron-phonon scattering rates that are calculated directly using a simulated phonon distribution (not the local temperature) taking into account (ii) the energy dependence of the phonon group velocity and phonon-phonon scattering rate and (iii) positive polarization charges due to piezoelectricity at the AlGaN/GaN interface. Using this advanced Monte Carlo method, we succeeded in simulating the current-voltage characteristics and thermal resistance of GaN HEMTs (High Electron Mobility Transistors), with which a quantitative evaluation could be made using actual devices. We also examined the convergence of this self-consistent Monte Carlo model.

Original languageEnglish
Title of host publication2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages349-352
Number of pages4
ISBN (Electronic)9781509008179
DOIs
Publication statusPublished - 2016 Oct 20
Event2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 - Nuremberg, Germany
Duration: 2016 Sep 62016 Sep 8

Other

Other2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
CountryGermany
CityNuremberg
Period16/9/616/9/8

    Fingerprint

Keywords

  • High Electron Mobility Transistor
  • Monte Carlo methods
  • Phonons
  • Thermal management of electronics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

Cite this

Ito, N., Misawa, T., & Awano, Y. (2016). Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution. In 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 (pp. 349-352). [7605218] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2016.7605218