Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution

Naoto Ito, Taichi Misawa, Yuji Awano

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    As a means of investigating both the electrical and thermal properties of nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method that used two new procedures: (i) a local temperature determination using the simulated phonon spatial distribution and feedback to update the electron-phonon scattering rates and (ii) a new algorithm which calculates long-time phonon transport by introducing different time increments for the electron and phonon transport. In this paper, to improve the quantitative accuracy and self-consistency of the simulation, we investigate an advanced Monte Carlo method considering (i) spatially dependent electron-phonon scattering rates that are calculated directly using a simulated phonon distribution (not the local temperature) taking into account (ii) the energy dependence of the phonon group velocity and phonon-phonon scattering rate and (iii) positive polarization charges due to piezoelectricity at the AlGaN/GaN interface. Using this advanced Monte Carlo method, we succeeded in simulating the current-voltage characteristics and thermal resistance of GaN HEMTs (High Electron Mobility Transistors), with which a quantitative evaluation could be made using actual devices. We also examined the convergence of this self-consistent Monte Carlo model.

    Original languageEnglish
    Title of host publication2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages349-352
    Number of pages4
    ISBN (Electronic)9781509008179
    DOIs
    Publication statusPublished - 2016 Oct 20
    Event2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 - Nuremberg, Germany
    Duration: 2016 Sep 62016 Sep 8

    Other

    Other2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
    CountryGermany
    CityNuremberg
    Period16/9/616/9/8

    Keywords

    • High Electron Mobility Transistor
    • Monte Carlo methods
    • Phonons
    • Thermal management of electronics

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Science Applications
    • Modelling and Simulation

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  • Cite this

    Ito, N., Misawa, T., & Awano, Y. (2016). Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution. In 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 (pp. 349-352). [7605218] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2016.7605218