Advanced quasi self-consistent Monte Carlo simulations of electrical and thermal properties of nanometer-scale gallium nitride HEMTs considering local phonon number distribution

Naoto Ito, Taichi Misawa, Yuji Awano

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    As a means of investigating both the electrical and thermal properties of nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method that used two new procedures: (i) a local temperature determination using the simulated phonon spatial distribution and feedback to update the electron-phonon scattering rates and (ii) a new algorithm which calculates long-time phonon transport by introducing different time increments for the electron and phonon transport. In this paper, to improve the quantitative accuracy and self-consistency of the simulation, we investigate an advanced Monte Carlo method considering (i) spatially dependent electron-phonon scattering rates that are calculated directly using a simulated phonon distribution (not the local temperature) taking into account (ii) the energy dependence of the phonon group velocity and phonon-phonon scattering rate and (iii) positive polarization charges due to piezoelectricity at the AlGaN/GaN interface. Using this advanced Monte Carlo method, we succeeded in simulating the current-voltage characteristics and thermal resistance of GaN HEMTs (High Electron Mobility Transistors), with which a quantitative evaluation could be made using actual devices. We also examined the convergence of this self-consistent Monte Carlo model.

    Original languageEnglish
    Title of host publication2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
    EditorsPeter Pichler, Eberhard Bar, Jurgen Lorenz
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages349-352
    Number of pages4
    ISBN (Electronic)9781509008179
    DOIs
    Publication statusPublished - 2016 Oct 20
    Event2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 - Nuremberg, Germany
    Duration: 2016 Sep 62016 Sep 8

    Publication series

    NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

    Other

    Other2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016
    Country/TerritoryGermany
    CityNuremberg
    Period16/9/616/9/8

    Keywords

    • High Electron Mobility Transistor
    • Monte Carlo methods
    • Phonons
    • Thermal management of electronics

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Science Applications
    • Modelling and Simulation

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