Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution

Ryosuke Sawabe, Naoto Ito, Yuji Awano

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    As a means of investigating both the electrical and thermal properties in nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method, including spatially dependent electron-phonon scattering rates, and a replica technique for phonon generation which enable us to calculate long-time phonon transport. Using this advanced Monte Carlo method, we succeeded in simulating the high-frequency characteristics of nanometer-scale gallium-nitride high-electron-mobility transistors (HEMTs). The simulations suggest that a shorter gate HEMT exhibits larger performance degradation in cut-off frequency due to the local-heating effect. We also report Monte Carlo simulations of nm-scale GaN HEMTs with heat-removal structures on the surface.

    Original languageEnglish
    Title of host publication2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages285-288
    Number of pages4
    Volume2017-September
    ISBN (Electronic)9784863486102
    DOIs
    Publication statusPublished - 2017 Oct 25
    Event2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 - Kamakura, Japan
    Duration: 2017 Sep 72017 Sep 9

    Other

    Other2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
    CountryJapan
    CityKamakura
    Period17/9/717/9/9

    Keywords

    • device simulation
    • electron transport
    • Gallium Nitride (GaN)
    • High Electron Mobility Transistor (HEMT)
    • Monte Carlo
    • phonon transport

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Science Applications
    • Modelling and Simulation

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  • Cite this

    Sawabe, R., Ito, N., & Awano, Y. (2017). Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution. In 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 (Vol. 2017-September, pp. 285-288). [8085320] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SISPAD.2017.8085320