Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution

Ryosuke Sawabe, Naoto Ito, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As a means of investigating both the electrical and thermal properties in nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method, including spatially dependent electron-phonon scattering rates, and a replica technique for phonon generation which enable us to calculate long-time phonon transport. Using this advanced Monte Carlo method, we succeeded in simulating the high-frequency characteristics of nanometer-scale gallium-nitride high-electron-mobility transistors (HEMTs). The simulations suggest that a shorter gate HEMT exhibits larger performance degradation in cut-off frequency due to the local-heating effect. We also report Monte Carlo simulations of nm-scale GaN HEMTs with heat-removal structures on the surface.

Original languageEnglish
Title of host publication2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages285-288
Number of pages4
Volume2017-September
ISBN (Electronic)9784863486102
DOIs
Publication statusPublished - 2017 Oct 25
Event2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 - Kamakura, Japan
Duration: 2017 Sep 72017 Sep 9

Other

Other2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
CountryJapan
CityKamakura
Period17/9/717/9/9

Fingerprint

High electron mobility transistors
Phonon
Monte Carlo Simulation
Electron
Electron devices
Gallium nitride
Phonon scattering
Electron scattering
Monte Carlo method
Cutoff frequency
Electric properties
Monte Carlo methods
Thermodynamic properties
Nitrides
Thermal Properties
Electrical Properties
Heating
Degradation
Replica
Simulation Methods

Keywords

  • device simulation
  • electron transport
  • Gallium Nitride (GaN)
  • High Electron Mobility Transistor (HEMT)
  • Monte Carlo
  • phonon transport

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

Cite this

Sawabe, R., Ito, N., & Awano, Y. (2017). Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution. In 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 (Vol. 2017-September, pp. 285-288). [8085320] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SISPAD.2017.8085320

Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution. / Sawabe, Ryosuke; Ito, Naoto; Awano, Yuji.

2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. Vol. 2017-September Institute of Electrical and Electronics Engineers Inc., 2017. p. 285-288 8085320.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sawabe, R, Ito, N & Awano, Y 2017, Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution. in 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. vol. 2017-September, 8085320, Institute of Electrical and Electronics Engineers Inc., pp. 285-288, 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017, Kamakura, Japan, 17/9/7. https://doi.org/10.23919/SISPAD.2017.8085320
Sawabe R, Ito N, Awano Y. Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution. In 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. Vol. 2017-September. Institute of Electrical and Electronics Engineers Inc. 2017. p. 285-288. 8085320 https://doi.org/10.23919/SISPAD.2017.8085320
Sawabe, Ryosuke ; Ito, Naoto ; Awano, Yuji. / Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution. 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. Vol. 2017-September Institute of Electrical and Electronics Engineers Inc., 2017. pp. 285-288
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