Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution

Ryosuke Sawabe, Naoto Ito, Yuji Awano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As a means of investigating both the electrical and thermal properties in nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method, including spatially dependent electron-phonon scattering rates, and a replica technique for phonon generation which enable us to calculate long-time phonon transport. Using this advanced Monte Carlo method, we succeeded in simulating the high-frequency characteristics of nanometer-scale gallium-nitride high-electron-mobility transistors (HEMTs). The simulations suggest that a shorter gate HEMT exhibits larger performance degradation in cut-off frequency due to the local-heating effect. We also report Monte Carlo simulations of nm-scale GaN HEMTs with heat-removal structures on the surface.

Original languageEnglish
Title of host publication2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages285-288
Number of pages4
Volume2017-September
ISBN (Electronic)9784863486102
DOIs
Publication statusPublished - 2017 Oct 25
Event2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 - Kamakura, Japan
Duration: 2017 Sep 72017 Sep 9

Other

Other2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
CountryJapan
CityKamakura
Period17/9/717/9/9

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Keywords

  • device simulation
  • electron transport
  • Gallium Nitride (GaN)
  • High Electron Mobility Transistor (HEMT)
  • Monte Carlo
  • phonon transport

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

Cite this

Sawabe, R., Ito, N., & Awano, Y. (2017). Advanced quasi-self-consistent Monte Carlo simulations on high-frequency performance of nanometer-scale GaN HEMTs considering local phonon distribution. In 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 (Vol. 2017-September, pp. 285-288). [8085320] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SISPAD.2017.8085320