Abstract
As a means of investigating both the electrical and thermal properties in nanometer-scale electron devices within a reasonable computing time, we previously proposed a quasi-self-consistent Monte Carlo simulation method, including spatially dependent electron-phonon scattering rates, and a replica technique for phonon generation which enable us to calculate long-time phonon transport. Using this advanced Monte Carlo method, we succeeded in simulating the high-frequency characteristics of nanometer-scale gallium-nitride high-electron-mobility transistors (HEMTs). The simulations suggest that a shorter gate HEMT exhibits larger performance degradation in cut-off frequency due to the local-heating effect. We also report Monte Carlo simulations of nm-scale GaN HEMTs with heat-removal structures on the surface.
| Original language | English |
|---|---|
| Title of host publication | 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 285-288 |
| Number of pages | 4 |
| Volume | 2017-September |
| ISBN (Electronic) | 9784863486102 |
| DOIs | |
| Publication status | Published - 2017 Oct 25 |
| Event | 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 - Kamakura, Japan Duration: 2017 Sep 7 → 2017 Sep 9 |
Other
| Other | 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 |
|---|---|
| Country | Japan |
| City | Kamakura |
| Period | 17/9/7 → 17/9/9 |
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Keywords
- device simulation
- electron transport
- Gallium Nitride (GaN)
- High Electron Mobility Transistor (HEMT)
- Monte Carlo
- phonon transport
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Computer Science Applications
- Modelling and Simulation