Alkali incorporation control in Cu (In,Ga) Se2 thin films using silicate thin layers and applications in enhancing flexible solar cell efficiency

Shogo Ishizuka, Akimasa Yamada, Koji Matsubara, Paul Fons, Keiichiro Sakurai, Shigeru Niki

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

Control of the alkali doping level in Cu (In,Ga) Se2 (CIGS) films was demonstrated using alkali-silicate thin layers of various thickness deposited on substrates prior to the sputtering of the Mo back contact layer. Not only the alkali density in the CIGS film, but also the Ga composition distribution in CIGS films, CIGS grain size, and consequent photovoltaic performance showed variations with the silicate layer thickness. Using alkali-silicate thin layers as an alkali source material, 17.4% and 17.7% efficiency flexible CIGS solar cells have been demonstrated on Ti and zirconia substrates, respectively.

Original languageEnglish
Article number124105
JournalApplied Physics Letters
Volume93
Issue number12
DOIs
Publication statusPublished - 2008 Oct 6
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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