Alkali incorporation control in Cu (In,Ga) Se2 thin films using silicate thin layers and applications in enhancing flexible solar cell efficiency

Shogo Ishizuka; Akimasa Yamada; Koji Matsubara; Paul Fons; Keiichiro Sakurai; Shigeru Niki

doi:10.1063/1.2992061

Alkali incorporation control in Cu (In,Ga) Se₂ thin films using silicate thin layers and applications in enhancing flexible solar cell efficiency

Shogo Ishizuka, Akimasa Yamada, Koji Matsubara, Paul Fons, Keiichiro Sakurai, Shigeru Niki

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

Control of the alkali doping level in Cu (In,Ga) Se₂ (CIGS) films was demonstrated using alkali-silicate thin layers of various thickness deposited on substrates prior to the sputtering of the Mo back contact layer. Not only the alkali density in the CIGS film, but also the Ga composition distribution in CIGS films, CIGS grain size, and consequent photovoltaic performance showed variations with the silicate layer thickness. Using alkali-silicate thin layers as an alkali source material, 17.4% and 17.7% efficiency flexible CIGS solar cells have been demonstrated on Ti and zirconia substrates, respectively.

Original language	English
Article number	124105
Journal	Applied Physics Letters
Volume	93
Issue number	12
DOIs	https://doi.org/10.1063/1.2992061
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.2992061

Cite this

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title = "Alkali incorporation control in Cu (In,Ga) Se2 thin films using silicate thin layers and applications in enhancing flexible solar cell efficiency",

abstract = "Control of the alkali doping level in Cu (In,Ga) Se2 (CIGS) films was demonstrated using alkali-silicate thin layers of various thickness deposited on substrates prior to the sputtering of the Mo back contact layer. Not only the alkali density in the CIGS film, but also the Ga composition distribution in CIGS films, CIGS grain size, and consequent photovoltaic performance showed variations with the silicate layer thickness. Using alkali-silicate thin layers as an alkali source material, 17.4% and 17.7% efficiency flexible CIGS solar cells have been demonstrated on Ti and zirconia substrates, respectively.",

author = "Shogo Ishizuka and Akimasa Yamada and Koji Matsubara and Paul Fons and Keiichiro Sakurai and Shigeru Niki",

note = "Funding Information: The authors would like to thank K. Hashimoto for help with device fabrication process, and N. Kido for a fruitful discussion. This work was supported in part by NEDO. ",

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T1 - Alkali incorporation control in Cu (In,Ga) Se2 thin films using silicate thin layers and applications in enhancing flexible solar cell efficiency

AU - Ishizuka, Shogo

AU - Yamada, Akimasa

AU - Matsubara, Koji

AU - Fons, Paul

AU - Sakurai, Keiichiro

AU - Niki, Shigeru

N1 - Funding Information: The authors would like to thank K. Hashimoto for help with device fabrication process, and N. Kido for a fruitful discussion. This work was supported in part by NEDO.

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N2 - Control of the alkali doping level in Cu (In,Ga) Se2 (CIGS) films was demonstrated using alkali-silicate thin layers of various thickness deposited on substrates prior to the sputtering of the Mo back contact layer. Not only the alkali density in the CIGS film, but also the Ga composition distribution in CIGS films, CIGS grain size, and consequent photovoltaic performance showed variations with the silicate layer thickness. Using alkali-silicate thin layers as an alkali source material, 17.4% and 17.7% efficiency flexible CIGS solar cells have been demonstrated on Ti and zirconia substrates, respectively.

AB - Control of the alkali doping level in Cu (In,Ga) Se2 (CIGS) films was demonstrated using alkali-silicate thin layers of various thickness deposited on substrates prior to the sputtering of the Mo back contact layer. Not only the alkali density in the CIGS film, but also the Ga composition distribution in CIGS films, CIGS grain size, and consequent photovoltaic performance showed variations with the silicate layer thickness. Using alkali-silicate thin layers as an alkali source material, 17.4% and 17.7% efficiency flexible CIGS solar cells have been demonstrated on Ti and zirconia substrates, respectively.

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