All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal

Akihiko Shinya, Shinji Matsuo, Yosia, Takasumi Tanabe, Eiichi Kuramochi, Tomonari Sato, Takaaki Kakitsuka, Masaya Notomi

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 μm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 μW, which is about one hundred times less than that required for laser based bistable memories.

Original languageEnglish
Pages (from-to)19382-19387
Number of pages6
JournalOptics Express
Volume16
Issue number23
Publication statusPublished - 2008 Nov 10
Externally publishedYes

Fingerprint

Q factors
chips
photonics
plasma diffusion
optical bistability
crystals
refractivity
modulation
wavelengths
lasers
energy

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Shinya, A., Matsuo, S., Yosia, Tanabe, T., Kuramochi, E., Sato, T., ... Notomi, M. (2008). All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal. Optics Express, 16(23), 19382-19387.

All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal. / Shinya, Akihiko; Matsuo, Shinji; Yosia, ; Tanabe, Takasumi; Kuramochi, Eiichi; Sato, Tomonari; Kakitsuka, Takaaki; Notomi, Masaya.

In: Optics Express, Vol. 16, No. 23, 10.11.2008, p. 19382-19387.

Research output: Contribution to journalArticle

Shinya, A, Matsuo, S, Yosia, , Tanabe, T, Kuramochi, E, Sato, T, Kakitsuka, T & Notomi, M 2008, 'All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal', Optics Express, vol. 16, no. 23, pp. 19382-19387.
Shinya A, Matsuo S, Yosia , Tanabe T, Kuramochi E, Sato T et al. All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal. Optics Express. 2008 Nov 10;16(23):19382-19387.
Shinya, Akihiko ; Matsuo, Shinji ; Yosia, ; Tanabe, Takasumi ; Kuramochi, Eiichi ; Sato, Tomonari ; Kakitsuka, Takaaki ; Notomi, Masaya. / All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal. In: Optics Express. 2008 ; Vol. 16, No. 23. pp. 19382-19387.
@article{494988e813164aba9bc049c5837bd0d4,
title = "All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal",
abstract = "We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 μm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 μW, which is about one hundred times less than that required for laser based bistable memories.",
author = "Akihiko Shinya and Shinji Matsuo and Yosia and Takasumi Tanabe and Eiichi Kuramochi and Tomonari Sato and Takaaki Kakitsuka and Masaya Notomi",
year = "2008",
month = "11",
day = "10",
language = "English",
volume = "16",
pages = "19382--19387",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "23",

}

TY - JOUR

T1 - All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal

AU - Shinya, Akihiko

AU - Matsuo, Shinji

AU - Yosia,

AU - Tanabe, Takasumi

AU - Kuramochi, Eiichi

AU - Sato, Tomonari

AU - Kakitsuka, Takaaki

AU - Notomi, Masaya

PY - 2008/11/10

Y1 - 2008/11/10

N2 - We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 μm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 μW, which is about one hundred times less than that required for laser based bistable memories.

AB - We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 μm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 μW, which is about one hundred times less than that required for laser based bistable memories.

UR - http://www.scopus.com/inward/record.url?scp=56249105105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56249105105&partnerID=8YFLogxK

M3 - Article

C2 - 19585709

AN - SCOPUS:56249105105

VL - 16

SP - 19382

EP - 19387

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 23

ER -