All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

Takasumi Tanabe; Hisashi Sumikura; Hideaki Taniyama; Akihiko Shinya; Masaya Notomi

doi:10.1063/1.3357427

All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

Takasumi Tanabe, Hisashi Sumikura, Hideaki Taniyama, Akihiko Shinya, Masaya Notomi

Research output: Contribution to journal › Article › peer-review

98 Citations (Scopus)

Abstract

We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high- Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photocurrent is enhanced of more than 10⁵ due to the ultrahigh- Q (Q≃ 10⁵). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10^-8 W, the quantum efficiency of this device reaches ∼10%.

Original language	English
Article number	101103
Journal	Applied Physics Letters
Volume	96
Issue number	10
DOIs	https://doi.org/10.1063/1.3357427
Publication status	Published - 2010
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip",

abstract = "We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high- Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photocurrent is enhanced of more than 105 due to the ultrahigh- Q (Q≃ 105). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10-8 W, the quantum efficiency of this device reaches ∼10%.",

author = "Takasumi Tanabe and Hisashi Sumikura and Hideaki Taniyama and Akihiko Shinya and Masaya Notomi",

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AU - Tanabe, Takasumi

AU - Sumikura, Hisashi

AU - Taniyama, Hideaki

AU - Shinya, Akihiko

AU - Notomi, Masaya

PY - 2010

Y1 - 2010

N2 - We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high- Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photocurrent is enhanced of more than 105 due to the ultrahigh- Q (Q≃ 105). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10-8 W, the quantum efficiency of this device reaches ∼10%.

AB - We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high- Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photocurrent is enhanced of more than 105 due to the ultrahigh- Q (Q≃ 105). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10-8 W, the quantum efficiency of this device reaches ∼10%.

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All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

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