All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip

Takasumi Tanabe, Hisashi Sumikura, Hideaki Taniyama, Akihiko Shinya, Masaya Notomi

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

We demonstrate channel selective 0.1-Gb/s photoreceiver operation at telecom wavelength using a silicon high- Q photonic crystal nanocavity with a laterally integrated p-i-n diode. Due to the good crystal property of silicon the measured dark current is only 15 pA. The linear and nonlinear characteristics are investigated in detail, in which we found that the photocurrent is enhanced of more than 105 due to the ultrahigh- Q (Q≃ 105). With the help of two-photon absorption, which is visible at a surprisingly low input power of 10-8 W, the quantum efficiency of this device reaches ∼10%.

Original languageEnglish
Article number101103
JournalApplied Physics Letters
Volume96
Issue number10
DOIs
Publication statusPublished - 2010
Externally publishedYes

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dark current
quantum efficiency
chips
p-i-n diodes
detectors
silicon
crystals
photocurrents
Q factors
photonics
photons
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip. / Tanabe, Takasumi; Sumikura, Hisashi; Taniyama, Hideaki; Shinya, Akihiko; Notomi, Masaya.

In: Applied Physics Letters, Vol. 96, No. 10, 101103, 2010.

Research output: Contribution to journalArticle

Tanabe, Takasumi ; Sumikura, Hisashi ; Taniyama, Hideaki ; Shinya, Akihiko ; Notomi, Masaya. / All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip. In: Applied Physics Letters. 2010 ; Vol. 96, No. 10.
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