TY - JOUR
T1 - Aluminum thickness dependence of resistance change in spin tunneling junctions Co/Al-oxide/Co
AU - Kaiju, Hideo
AU - Nishiyama, Mao
AU - Otaka, Yuki
AU - Sakaguchi, Naoaki
AU - Shiiki, Kazuo
N1 - Funding Information:
This research was supported by a grant from the Japan Society for the Promotion of Science (JSPS). The authors would like to express gratitude to Mr. Kouno for his useful discussions and valuable suggestions with respect to the resistance change.
PY - 2006/11
Y1 - 2006/11
N2 - The oxidation states of Al-oxide layer and the leakage current density in coercive differential spin tunneling junctions Co/Al-oxide/Co have been investigated in order to clear the mechanism of the increasing resistance change. X-ray photoelectron spectroscopy analysis shows that the resistance change increases with decreasing unoxidized Al, which can be qualitatively explained by using first-principle band calculation based on linear-muffin-tin-orbital atomic-sphere-approximation method. The resistance change decreases with increasing leakage current density, which originates from Schottky effect. Reduction of unoxidized Al and leakage current density originating from Schottky effect is required to obtain the large resistance change in spin tunneling junctions.
AB - The oxidation states of Al-oxide layer and the leakage current density in coercive differential spin tunneling junctions Co/Al-oxide/Co have been investigated in order to clear the mechanism of the increasing resistance change. X-ray photoelectron spectroscopy analysis shows that the resistance change increases with decreasing unoxidized Al, which can be qualitatively explained by using first-principle band calculation based on linear-muffin-tin-orbital atomic-sphere-approximation method. The resistance change decreases with increasing leakage current density, which originates from Schottky effect. Reduction of unoxidized Al and leakage current density originating from Schottky effect is required to obtain the large resistance change in spin tunneling junctions.
KW - First principle band calculation
KW - Ion-beam sputtering
KW - Leakage current
KW - Oxidation state
KW - Spin tunneling junctions
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U2 - 10.1016/j.jmmm.2006.02.237
DO - 10.1016/j.jmmm.2006.02.237
M3 - Article
AN - SCOPUS:33747893589
SN - 0304-8853
VL - 306
SP - 161
EP - 165
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
IS - 1
ER -