Ambipolar transistors based on chloro-substituted tetraphenylpentacene

Ryonosuke Sato, Shohei Eda, Haruki Sugiyama, Hidehiro Uekusa, Toshiyuki Hamura, Takehiko Mori

Research output: Contribution to journalArticle

Abstract

Thin-film transistors of halogen-substituted tetraphenylpentacenes are investigated. These compounds exhibit mainly hole transport, but the chlorine compound shows considerably higher performance than the fluorine and bromine compounds. In addition, the chlorine compound shows ambipolar properties, though the hole mobility is four times larger than the electron mobility. These compounds have basically the same crystal structures, but the remarkable halogen dependence is explained by the critical location of the LUMO levels, as well as intermolecular transfers, which sensitively change depending on the stacking geometry. In particular, hole and electron transfer exhibit different periodicity depending on the slip distance along the molecular long axis, and this is related to the appearance of the electron transport properties.

Original languageEnglish
Pages (from-to)3294-3299
Number of pages6
JournalJournal of Materials Chemistry C
Volume7
Issue number11
DOIs
Publication statusPublished - 2019 Jan 1
Externally publishedYes

Fingerprint

Chlorine Compounds
Halogens
Chlorine compounds
Bromine Compounds
Bromine compounds
Transistors
Fluorine Compounds
Fluorine compounds
Electron transport properties
Hole mobility
Electron mobility
Thin film transistors
Crystal structure
Geometry
Electrons

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Cite this

Sato, R., Eda, S., Sugiyama, H., Uekusa, H., Hamura, T., & Mori, T. (2019). Ambipolar transistors based on chloro-substituted tetraphenylpentacene. Journal of Materials Chemistry C, 7(11), 3294-3299. https://doi.org/10.1039/c8tc06603e

Ambipolar transistors based on chloro-substituted tetraphenylpentacene. / Sato, Ryonosuke; Eda, Shohei; Sugiyama, Haruki; Uekusa, Hidehiro; Hamura, Toshiyuki; Mori, Takehiko.

In: Journal of Materials Chemistry C, Vol. 7, No. 11, 01.01.2019, p. 3294-3299.

Research output: Contribution to journalArticle

Sato, R, Eda, S, Sugiyama, H, Uekusa, H, Hamura, T & Mori, T 2019, 'Ambipolar transistors based on chloro-substituted tetraphenylpentacene', Journal of Materials Chemistry C, vol. 7, no. 11, pp. 3294-3299. https://doi.org/10.1039/c8tc06603e
Sato, Ryonosuke ; Eda, Shohei ; Sugiyama, Haruki ; Uekusa, Hidehiro ; Hamura, Toshiyuki ; Mori, Takehiko. / Ambipolar transistors based on chloro-substituted tetraphenylpentacene. In: Journal of Materials Chemistry C. 2019 ; Vol. 7, No. 11. pp. 3294-3299.
@article{79ee259d18f74fc1a01a3baddff539a9,
title = "Ambipolar transistors based on chloro-substituted tetraphenylpentacene",
abstract = "Thin-film transistors of halogen-substituted tetraphenylpentacenes are investigated. These compounds exhibit mainly hole transport, but the chlorine compound shows considerably higher performance than the fluorine and bromine compounds. In addition, the chlorine compound shows ambipolar properties, though the hole mobility is four times larger than the electron mobility. These compounds have basically the same crystal structures, but the remarkable halogen dependence is explained by the critical location of the LUMO levels, as well as intermolecular transfers, which sensitively change depending on the stacking geometry. In particular, hole and electron transfer exhibit different periodicity depending on the slip distance along the molecular long axis, and this is related to the appearance of the electron transport properties.",
author = "Ryonosuke Sato and Shohei Eda and Haruki Sugiyama and Hidehiro Uekusa and Toshiyuki Hamura and Takehiko Mori",
year = "2019",
month = "1",
day = "1",
doi = "10.1039/c8tc06603e",
language = "English",
volume = "7",
pages = "3294--3299",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry",
number = "11",

}

TY - JOUR

T1 - Ambipolar transistors based on chloro-substituted tetraphenylpentacene

AU - Sato, Ryonosuke

AU - Eda, Shohei

AU - Sugiyama, Haruki

AU - Uekusa, Hidehiro

AU - Hamura, Toshiyuki

AU - Mori, Takehiko

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Thin-film transistors of halogen-substituted tetraphenylpentacenes are investigated. These compounds exhibit mainly hole transport, but the chlorine compound shows considerably higher performance than the fluorine and bromine compounds. In addition, the chlorine compound shows ambipolar properties, though the hole mobility is four times larger than the electron mobility. These compounds have basically the same crystal structures, but the remarkable halogen dependence is explained by the critical location of the LUMO levels, as well as intermolecular transfers, which sensitively change depending on the stacking geometry. In particular, hole and electron transfer exhibit different periodicity depending on the slip distance along the molecular long axis, and this is related to the appearance of the electron transport properties.

AB - Thin-film transistors of halogen-substituted tetraphenylpentacenes are investigated. These compounds exhibit mainly hole transport, but the chlorine compound shows considerably higher performance than the fluorine and bromine compounds. In addition, the chlorine compound shows ambipolar properties, though the hole mobility is four times larger than the electron mobility. These compounds have basically the same crystal structures, but the remarkable halogen dependence is explained by the critical location of the LUMO levels, as well as intermolecular transfers, which sensitively change depending on the stacking geometry. In particular, hole and electron transfer exhibit different periodicity depending on the slip distance along the molecular long axis, and this is related to the appearance of the electron transport properties.

UR - http://www.scopus.com/inward/record.url?scp=85062871728&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85062871728&partnerID=8YFLogxK

U2 - 10.1039/c8tc06603e

DO - 10.1039/c8tc06603e

M3 - Article

VL - 7

SP - 3294

EP - 3299

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 11

ER -