Abstract
Temperature dependence of amorphization processes in ion-implanted Si has been investigated using Raman spectroscopy together with cross-sectional transmission microscopy. The crystal Si Raman peak decreased and the amorphous Si (a-Si) peak became predominant as the substrate temperature was decreased from 23°C to -200°C. Based on the analysis of bond angle deviations derived from the a-Si peaks, we have proposed a model in which an accumulation of small vacancies induces amorphization at low temperatures, while larger vacancy complexes play an important role.
| Original language | English |
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| Pages | 44-46 |
| Number of pages | 3 |
| Publication status | Published - 1991 |
| Externally published | Yes |
| Event | 23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn Duration: 1991 Aug 27 → 1991 Aug 29 |
Conference
| Conference | 23rd International Conference on Solid State Devices and Materials - SSDM '91 |
|---|---|
| City | Yokohama, Jpn |
| Period | 91/8/27 → 91/8/29 |
ASJC Scopus subject areas
- Engineering(all)